Dynamics of LO phonons in InN studied by subpicosecond time-resolved Raman spectroscopy

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The phonon dynamics of both the A1 (LO) and the E1 (LO) phonons in InN has been studied by time-resolved Raman spectroscopy on a subpicosecond time scale. From the temperature-dependence of their lifetimes, we demonstrate that both phonons decay primarily into a large wavevector TO phonon and a large wavevector TA/LA phonon consistent with the accepted phonon dispersion relationship for wurtzite InN. Their lifetimes have been found to decrease from 2.2 ps, at the low electron-hole pair density of5×10 17 cm-3 to 0.25 ps, at the highest density of 2×1019 cm-3. Our experimental findings demonstrate that carrier-density dependence of LO phonon lifetime is a universal phenomenon in polar semiconductors.

Original languageEnglish (US)
Title of host publicationPhonon Engineering for Enhanced Materials Solutions - Theory and Applications
Number of pages14
StatePublished - 2010
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 30 2009Dec 2 2009

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2009 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA


  • InN
  • LO phonon lifetimes
  • Time-resolved Raman spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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