Dynamic observation of defect annealing in CdTe at lattice resolution

R. Sinclair; F. A. Ponce; T. Yamashita; David J. Smith; R. A. Camps; L. A. Freeman; S. J. Erasmus; W. C. Nixon; K. C.A. Smith; C. J.D. Catto

doi:10.1038/298127a0

Dynamic observation of defect annealing in CdTe at lattice resolution

R. Sinclair
, F. A. Ponce
, T. Yamashita
, David J. Smith
, R. A. Camps
, L. A. Freeman
, S. J. Erasmus
, W. C. Nixon
, K. C.A. Smith
, C. J.D. Catto

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

Atomic-level events in the semiconductor material CdTe have been documented directly with real-time video recording, using a high resolution transmission electron microscope equipped with an image pick-up and display system. Among the various solid-state reactions observed were dislocation motion by slip, dislocation climb by diffusion and the annealing of several types of defects.

Original language	English (US)
Pages (from-to)	127-131
Number of pages	5
Journal	Nature
Volume	298
Issue number	5870
DOIs	https://doi.org/10.1038/298127a0
State	Published - 1982
Externally published	Yes

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title = "Dynamic observation of defect annealing in CdTe at lattice resolution",

abstract = "Atomic-level events in the semiconductor material CdTe have been documented directly with real-time video recording, using a high resolution transmission electron microscope equipped with an image pick-up and display system. Among the various solid-state reactions observed were dislocation motion by slip, dislocation climb by diffusion and the annealing of several types of defects.",

author = "R. Sinclair and Ponce, \{F. A.\} and T. Yamashita and Smith, \{David J.\} and Camps, \{R. A.\} and Freeman, \{L. A.\} and Erasmus, \{S. J.\} and Nixon, \{W. C.\} and Smith, \{K. C.A.\} and Catto, \{C. J.D.\}",

year = "1982",

doi = "10.1038/298127a0",

language = "English (US)",

volume = "298",

pages = "127--131",

journal = "Nature",

issn = "0028-0836",

publisher = "Nature Research",

number = "5870",

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TY - JOUR

T1 - Dynamic observation of defect annealing in CdTe at lattice resolution

AU - Sinclair, R.

AU - Ponce, F. A.

AU - Yamashita, T.

AU - Smith, David J.

AU - Camps, R. A.

AU - Freeman, L. A.

AU - Erasmus, S. J.

AU - Nixon, W. C.

AU - Smith, K. C.A.

AU - Catto, C. J.D.

PY - 1982

Y1 - 1982

N2 - Atomic-level events in the semiconductor material CdTe have been documented directly with real-time video recording, using a high resolution transmission electron microscope equipped with an image pick-up and display system. Among the various solid-state reactions observed were dislocation motion by slip, dislocation climb by diffusion and the annealing of several types of defects.

AB - Atomic-level events in the semiconductor material CdTe have been documented directly with real-time video recording, using a high resolution transmission electron microscope equipped with an image pick-up and display system. Among the various solid-state reactions observed were dislocation motion by slip, dislocation climb by diffusion and the annealing of several types of defects.

UR - https://www.scopus.com/pages/publications/0019937377

UR - https://www.scopus.com/pages/publications/0019937377#tab=citedBy

U2 - 10.1038/298127a0

DO - 10.1038/298127a0

M3 - Article

AN - SCOPUS:0019937377

SN - 0028-0836

VL - 298

SP - 127

EP - 131

JO - Nature

JF - Nature

IS - 5870

ER -

Dynamic observation of defect annealing in CdTe at lattice resolution

Abstract

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