Dynamic observation of defect annealing in CdTe at lattice resolution

R. Sinclair, F. A. Ponce, T. Yamashita, David J. Smith, R. A. Camps, L. A. Freeman, S. J. Erasmus, W. C. Nixon, K. C.A. Smith, C. J.D. Catto

Research output: Contribution to journalArticlepeer-review

38 Scopus citations


Atomic-level events in the semiconductor material CdTe have been documented directly with real-time video recording, using a high resolution transmission electron microscope equipped with an image pick-up and display system. Among the various solid-state reactions observed were dislocation motion by slip, dislocation climb by diffusion and the annealing of several types of defects.

Original languageEnglish (US)
Pages (from-to)127-131
Number of pages5
Issue number5870
StatePublished - 1982
Externally publishedYes

ASJC Scopus subject areas

  • General


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