Abstract
This letter presents dual functions including selector and memory switching in a V/SiOx/AlOy/p++Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a positive forming with low CCL of 1 μA. The shifts to the V-electrode side of the oxygen form the VOxlayer, where the threshold switching can be explained by the metal-insulation-transition phenomenon. For higher CCL (30 μA) applied to the device, a bipolar memory switching is obtained, which is attributed to formation and rupture of the conducting filament in SiOylayer. 1.5-nm-thick AlOylayer with high thermal conductivity plays an important role in lowering the off-current for memory and threshold switching. Through the temperature dependence, high-energy barrier (0.463 eV) in the LRS is confirmed, which can cause nonlinearity in a low-resistance state. The smaller the CCL, the higher the nonlinearity, which provides a larger array size in the cross-point array. The coexistence of memory and threshold switching in accordance with the CCL provides the flexibility to control the device for its intended use.
Original language | English (US) |
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Article number | 252 |
Journal | Nanoscale Research Letters |
Volume | 13 |
DOIs | |
State | Published - 2018 |
Externally published | Yes |
Keywords
- Memory
- Nonlinearity
- Resistive switching
- Selector
- Silicon oxide
- Vanadium
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics