Doping of direct gap Ge1-ySny Alloys to attain electroluminescence and enhanced photoluminescence

C. L. Senaratne; J. D. Gallagher; C. Xu; P. E. Sims; Jose Menendez; John Kouvetakis

doi:10.1149/06914.0157ecst

Doping of direct gap Ge_1-ySn_y Alloys to attain electroluminescence and enhanced photoluminescence

C. L. Senaratne
, J. D. Gallagher
, C. Xu
, P. E. Sims
, Jose Menendez
, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Low temperature (T < 300°C) in-situ doping protocols were developed for Ge1-ySny alloys with compositions above the indirect-to-direct gap crossover point, which were deposited using CVD. Trisilylphosphine (P(SiH₃)₃) was used as the n-type dopant source while diborane (B₂H₆) was used for p-type doping. This enabled the fabrication of pin diode structures with compositions up to y = 0.137. These photodiodes exhibit electroluminescence at wavelengths up to 2700 nm. Furthermore, it was demonstrated that n-type doping enhances the photoluminescence obtained from these materials.

Original language	English (US)
Title of host publication	State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58
Editors	J. H. He, C. O'Dwyer, F. Ren, E. Douglas, C. Jagadish, S. Jang, Y. L. Wang, R. P. Lynch, T. J. Anderson, J. K. Hite
Publisher	Electrochemical Society Inc.
Pages	157-164
Number of pages	8
Edition	14
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06914.0157ecst
State	Published - 2015
Event	Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting - Phoenix, United States Duration: Oct 11 2015 → Oct 15 2015

Publication series

Name	ECS Transactions
Number	14
Volume	69
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting
Country/Territory	United States
City	Phoenix
Period	10/11/15 → 10/15/15

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/06914.0157ecst

Cite this

Senaratne, C. L., Gallagher, J. D., Xu, C., Sims, P. E., Menendez, J., & Kouvetakis, J. (2015). Doping of direct gap Ge_1-ySn_y Alloys to attain electroluminescence and enhanced photoluminescence. In J. H. He, C. O'Dwyer, F. Ren, E. Douglas, C. Jagadish, S. Jang, Y. L. Wang, R. P. Lynch, T. J. Anderson, & J. K. Hite (Eds.), State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58 (14 ed., pp. 157-164). (ECS Transactions; Vol. 69, No. 14). Electrochemical Society Inc.. https://doi.org/10.1149/06914.0157ecst

Doping of direct gap Ge_1-ySn_y Alloys to attain electroluminescence and enhanced photoluminescence. / Senaratne, C. L.; Gallagher, J. D.; Xu, C. et al.
State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. ed. / J. H. He; C. O'Dwyer; F. Ren; E. Douglas; C. Jagadish; S. Jang; Y. L. Wang; R. P. Lynch; T. J. Anderson; J. K. Hite. 14. ed. Electrochemical Society Inc., 2015. p. 157-164 (ECS Transactions; Vol. 69, No. 14).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Senaratne, CL, Gallagher, JD, Xu, C, Sims, PE, Menendez, J & Kouvetakis, J 2015, Doping of direct gap Ge_1-ySn_y Alloys to attain electroluminescence and enhanced photoluminescence. in JH He, C O'Dwyer, F Ren, E Douglas, C Jagadish, S Jang, YL Wang, RP Lynch, TJ Anderson & JK Hite (eds), State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. 14 edn, ECS Transactions, no. 14, vol. 69, Electrochemical Society Inc., pp. 157-164, Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06914.0157ecst

Senaratne CL, Gallagher JD, Xu C, Sims PE, Menendez J , Kouvetakis J. Doping of direct gap Ge_1-ySn_y Alloys to attain electroluminescence and enhanced photoluminescence. In He JH, O'Dwyer C, Ren F, Douglas E, Jagadish C, Jang S, Wang YL, Lynch RP, Anderson TJ, Hite JK, editors, State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. 14 ed. Electrochemical Society Inc. 2015. p. 157-164. (ECS Transactions; 14). doi: 10.1149/06914.0157ecst

Senaratne, C. L. ; Gallagher, J. D. ; Xu, C. et al. / Doping of direct gap Ge_1-ySn_y Alloys to attain electroluminescence and enhanced photoluminescence. State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. editor / J. H. He ; C. O'Dwyer ; F. Ren ; E. Douglas ; C. Jagadish ; S. Jang ; Y. L. Wang ; R. P. Lynch ; T. J. Anderson ; J. K. Hite. 14. ed. Electrochemical Society Inc., 2015. pp. 157-164 (ECS Transactions; 14).

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