Doping-induced type-II to type-I transition and interband optical gain in InAs/AISb quantum wells

K. I. Kolokolov; C. Z. Ning

doi:10.1063/1.1605236

Doping-induced type-II to type-I transition and interband optical gain in InAs/AISb quantum wells

K. I. Kolokolov
, C. Z. Ning

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A study was performed on the doping-induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells. The interband gain for TM mode was as high as 4000 1/cm. The TE and the TM gain as functions of doping level and intrinsic electron-hole density were also discussed.

Original language	English (US)
Pages (from-to)	1581-1583
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	8
DOIs	https://doi.org/10.1063/1.1605236
State	Published - Aug 25 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1605236

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@article{85eec9d9d11e449c996ef0e21d9bcd1d,

title = "Doping-induced type-II to type-I transition and interband optical gain in InAs/AISb quantum wells",

abstract = "A study was performed on the doping-induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells. The interband gain for TM mode was as high as 4000 1/cm. The TE and the TM gain as functions of doping level and intrinsic electron-hole density were also discussed.",

author = "Kolokolov, \{K. I.\} and Ning, \{C. Z.\}",

year = "2003",

month = aug,

day = "25",

doi = "10.1063/1.1605236",

language = "English (US)",

volume = "83",

pages = "1581--1583",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Doping-induced type-II to type-I transition and interband optical gain in InAs/AISb quantum wells

AU - Kolokolov, K. I.

AU - Ning, C. Z.

PY - 2003/8/25

Y1 - 2003/8/25

N2 - A study was performed on the doping-induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells. The interband gain for TM mode was as high as 4000 1/cm. The TE and the TM gain as functions of doping level and intrinsic electron-hole density were also discussed.

AB - A study was performed on the doping-induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells. The interband gain for TM mode was as high as 4000 1/cm. The TE and the TM gain as functions of doping level and intrinsic electron-hole density were also discussed.

UR - https://www.scopus.com/pages/publications/0043283929

UR - https://www.scopus.com/pages/publications/0043283929#tab=citedBy

U2 - 10.1063/1.1605236

DO - 10.1063/1.1605236

M3 - Article

AN - SCOPUS:0043283929

SN - 0003-6951

VL - 83

SP - 1581

EP - 1583

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Doping-induced type-II to type-I transition and interband optical gain in InAs/AISb quantum wells

Abstract

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