Dopant compensation mechanism and leakage current in Pb(Zr0.52, Ti0.48)O3 thin films

C. K. Barlingay; Sandwip Dey

doi:10.1016/0040-6090(95)06983-6

Dopant compensation mechanism and leakage current in Pb(Zr_0.52, Ti_0.48)O3 thin films

C. K. Barlingay, Sandwip Dey

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

The dopant compensation mechanism in 2-5 mol.% niobium (Nb)-doped Pb(Zr_0.52, Ti_0.48)O₃ (PZT) thin films was studied to obtain single phase compositions, Transmission electron microscopy showed that the Nb-doped composition batched according to the Ti vacancy model, was single phase. This indicated that niobium donors were compensated by titanium vacancies at the B site. The beneficial effect of donors in single phase composition and detrimental effects of grain boundary second phases and acceptors on the leakage currents are reported, The single-phase Nb-doped (5%) PZT thin film exhibited a low leakage current of 1×10^-7 A cm^-2 at 1.2 MV cm^-1.

Original language	English (US)
Pages (from-to)	112-115
Number of pages	4
Journal	Thin Solid Films
Volume	272
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(95)06983-6
State	Published - Jan 1 1996

Keywords

Niobium
Titanium
Transmission electron microscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/0040-6090(95)06983-6

Cite this

@article{6c0886d5234241d0b5a2120d88b09bfd,

title = "Dopant compensation mechanism and leakage current in Pb(Zr0.52, Ti0.48)O3 thin films",

abstract = "The dopant compensation mechanism in 2-5 mol.% niobium (Nb)-doped Pb(Zr0.52, Ti0.48)O3 (PZT) thin films was studied to obtain single phase compositions, Transmission electron microscopy showed that the Nb-doped composition batched according to the Ti vacancy model, was single phase. This indicated that niobium donors were compensated by titanium vacancies at the B site. The beneficial effect of donors in single phase composition and detrimental effects of grain boundary second phases and acceptors on the leakage currents are reported, The single-phase Nb-doped (5%) PZT thin film exhibited a low leakage current of 1×10-7 A cm-2 at 1.2 MV cm-1.",

keywords = "Niobium, Titanium, Transmission electron microscopy",

author = "Barlingay, {C. K.} and Sandwip Dey",

year = "1996",

month = jan,

day = "1",

doi = "10.1016/0040-6090(95)06983-6",

language = "English (US)",

volume = "272",

pages = "112--115",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Dopant compensation mechanism and leakage current in Pb(Zr0.52, Ti0.48)O3 thin films

AU - Barlingay, C. K.

AU - Dey, Sandwip

PY - 1996/1/1

Y1 - 1996/1/1

N2 - The dopant compensation mechanism in 2-5 mol.% niobium (Nb)-doped Pb(Zr0.52, Ti0.48)O3 (PZT) thin films was studied to obtain single phase compositions, Transmission electron microscopy showed that the Nb-doped composition batched according to the Ti vacancy model, was single phase. This indicated that niobium donors were compensated by titanium vacancies at the B site. The beneficial effect of donors in single phase composition and detrimental effects of grain boundary second phases and acceptors on the leakage currents are reported, The single-phase Nb-doped (5%) PZT thin film exhibited a low leakage current of 1×10-7 A cm-2 at 1.2 MV cm-1.

AB - The dopant compensation mechanism in 2-5 mol.% niobium (Nb)-doped Pb(Zr0.52, Ti0.48)O3 (PZT) thin films was studied to obtain single phase compositions, Transmission electron microscopy showed that the Nb-doped composition batched according to the Ti vacancy model, was single phase. This indicated that niobium donors were compensated by titanium vacancies at the B site. The beneficial effect of donors in single phase composition and detrimental effects of grain boundary second phases and acceptors on the leakage currents are reported, The single-phase Nb-doped (5%) PZT thin film exhibited a low leakage current of 1×10-7 A cm-2 at 1.2 MV cm-1.

KW - Niobium

KW - Titanium

KW - Transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=0029736173&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029736173&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(95)06983-6

DO - 10.1016/0040-6090(95)06983-6

M3 - Article

AN - SCOPUS:0029736173

SN - 0040-6090

VL - 272

SP - 112

EP - 115

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -