Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array

Zhe Chen; Haitong Li; Hong Yu Chen; Bing Chen; Rui Liu; Peng Huang; Feifei Zhang; Zizhen Jiang; Hongfei Ye; Gao Bin Gao; Lifeng Liu; Xiaoyan Liu; Jinfeng Kang; H. S Philip Wong; Shimeng Yu

doi:10.1088/0957-4484/27/21/215204

Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array

Zhe Chen
, Haitong Li
, Hong Yu Chen
, Bing Chen
, Rui Liu
, Peng Huang
, Feifei Zhang
, Zizhen Jiang
, Hongfei Ye
, Gao Bin Gao
, Lifeng Liu
, Xiaoyan Liu
, Jinfeng Kang
, H. S Philip Wong
, Shimeng Yu

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Disturbance characteristics of cross-point resistive random access memory (RRAM) arrays are comprehensively studied in this paper. An analytical model is developed to quantify the number of pulses (#Pulse) the cell can bear before disturbance occurs under various sub-switching voltage stresses based on physical understanding. An evaluation methodology is proposed to assess the disturb behavior of half-selected (HS) cells in cross-point RRAM arrays by combining the analytical model and SPICE simulation. The characteristics of cross-point RRAM arrays such as energy consumption, reliable operating cycles and total error bits are evaluated by the methodology. A possible solution to mitigate disturbance is proposed.

Original language	English (US)
Article number	215204
Journal	Nanotechnology
Volume	27
Issue number	21
DOIs	https://doi.org/10.1088/0957-4484/27/21/215204
State	Published - Apr 20 2016

Keywords

SPICE simulation
cross-point array
half-selected (HS) cells
resistance disturbance
resistive random access memory (RRAM)

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/27/21/215204

Cite this

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title = "Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array",

abstract = "Disturbance characteristics of cross-point resistive random access memory (RRAM) arrays are comprehensively studied in this paper. An analytical model is developed to quantify the number of pulses (\#Pulse) the cell can bear before disturbance occurs under various sub-switching voltage stresses based on physical understanding. An evaluation methodology is proposed to assess the disturb behavior of half-selected (HS) cells in cross-point RRAM arrays by combining the analytical model and SPICE simulation. The characteristics of cross-point RRAM arrays such as energy consumption, reliable operating cycles and total error bits are evaluated by the methodology. A possible solution to mitigate disturbance is proposed.",

keywords = "SPICE simulation, cross-point array, half-selected (HS) cells, resistance disturbance, resistive random access memory (RRAM)",

author = "Zhe Chen and Haitong Li and Chen, \{Hong Yu\} and Bing Chen and Rui Liu and Peng Huang and Feifei Zhang and Zizhen Jiang and Hongfei Ye and \{Bin Gao\}, Gao and Lifeng Liu and Xiaoyan Liu and Jinfeng Kang and Wong, \{H. S Philip\} and Shimeng Yu",

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doi = "10.1088/0957-4484/27/21/215204",

language = "English (US)",

volume = "27",

journal = "Nanotechnology",

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TY - JOUR

T1 - Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array

AU - Chen, Zhe

AU - Li, Haitong

AU - Chen, Hong Yu

AU - Chen, Bing

AU - Liu, Rui

AU - Huang, Peng

AU - Zhang, Feifei

AU - Jiang, Zizhen

AU - Ye, Hongfei

AU - Bin Gao, Gao

AU - Liu, Lifeng

AU - Liu, Xiaoyan

AU - Kang, Jinfeng

AU - Wong, H. S Philip

AU - Yu, Shimeng

PY - 2016/4/20

Y1 - 2016/4/20

N2 - Disturbance characteristics of cross-point resistive random access memory (RRAM) arrays are comprehensively studied in this paper. An analytical model is developed to quantify the number of pulses (#Pulse) the cell can bear before disturbance occurs under various sub-switching voltage stresses based on physical understanding. An evaluation methodology is proposed to assess the disturb behavior of half-selected (HS) cells in cross-point RRAM arrays by combining the analytical model and SPICE simulation. The characteristics of cross-point RRAM arrays such as energy consumption, reliable operating cycles and total error bits are evaluated by the methodology. A possible solution to mitigate disturbance is proposed.

AB - Disturbance characteristics of cross-point resistive random access memory (RRAM) arrays are comprehensively studied in this paper. An analytical model is developed to quantify the number of pulses (#Pulse) the cell can bear before disturbance occurs under various sub-switching voltage stresses based on physical understanding. An evaluation methodology is proposed to assess the disturb behavior of half-selected (HS) cells in cross-point RRAM arrays by combining the analytical model and SPICE simulation. The characteristics of cross-point RRAM arrays such as energy consumption, reliable operating cycles and total error bits are evaluated by the methodology. A possible solution to mitigate disturbance is proposed.

KW - SPICE simulation

KW - cross-point array

KW - half-selected (HS) cells

KW - resistance disturbance

KW - resistive random access memory (RRAM)

UR - https://www.scopus.com/pages/publications/84964727094

UR - https://www.scopus.com/pages/publications/84964727094#tab=citedBy

U2 - 10.1088/0957-4484/27/21/215204

DO - 10.1088/0957-4484/27/21/215204

M3 - Article

AN - SCOPUS:84964727094

SN - 0957-4484

VL - 27

JO - Nanotechnology

JF - Nanotechnology

IS - 21

M1 - 215204

ER -

Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array

Abstract

Keywords

ASJC Scopus subject areas

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