Direct semiconductor bonded 5J cell for space and terrestrial applications

P. T. Chiu, D. C. Law, R. L. Woo, S. B. Singer, D. Bhusari, W. D. Hong, A. Zakaria, J. Boisvert, S. Mesropian, R. R. King, N. H. Karam

Research output: Contribution to journalArticlepeer-review

105 Scopus citations


Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/0.73 eV 5J cell with an efficiency of 37.8% under 1 sun AM1.5G spectrum and 35.1% efficiency for 1 sun AM0. The top three junctions and bottom two junctions were grown on GaAs and InP substrates, respectively, by metal organic vapor phase epitaxy. The GaAs-and InP-based cells were then direct bonded to create a low-resistance, high-transmissive interface. Both the space and terrestrial cells have high 1 sun Voc between 4.75 and 4.78 V. Initial tests of the terrestrial cells at concentration are promising with efficiencies increasing up to 10× concentration to a maximum value close to 41%.

Original languageEnglish (US)
Article number6595564
Pages (from-to)493-497
Number of pages5
JournalIEEE Journal of Photovoltaics
Issue number1
StatePublished - Jan 2014
Externally publishedYes


  • Direct wafer bonding
  • multijunction cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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