Direct semiconductor bonded 5J cell for space and terrestrial applications

P. T. Chiu; D. C. Law; R. L. Woo; S. B. Singer; D. Bhusari; W. D. Hong; A. Zakaria; J. Boisvert; S. Mesropian; R. R. King; N. H. Karam

doi:10.1109/JPHOTOV.2013.2279336

Direct semiconductor bonded 5J cell for space and terrestrial applications

P. T. Chiu, D. C. Law, R. L. Woo, S. B. Singer, D. Bhusari, W. D. Hong, A. Zakaria, J. Boisvert, S. Mesropian, R. R. King, N. H. Karam

Research output: Contribution to journal › Article › peer-review

105 Scopus citations

Abstract

Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/0.73 eV 5J cell with an efficiency of 37.8% under 1 sun AM1.5G spectrum and 35.1% efficiency for 1 sun AM0. The top three junctions and bottom two junctions were grown on GaAs and InP substrates, respectively, by metal organic vapor phase epitaxy. The GaAs-and InP-based cells were then direct bonded to create a low-resistance, high-transmissive interface. Both the space and terrestrial cells have high 1 sun V_oc between 4.75 and 4.78 V. Initial tests of the terrestrial cells at concentration are promising with efficiencies increasing up to 10× concentration to a maximum value close to 41%.

Original language	English (US)
Article number	6595564
Pages (from-to)	493-497
Number of pages	5
Journal	IEEE Journal of Photovoltaics
Volume	4
Issue number	1
DOIs	https://doi.org/10.1109/JPHOTOV.2013.2279336
State	Published - Jan 2014
Externally published	Yes

Keywords

Direct wafer bonding
multijunction cells

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JPHOTOV.2013.2279336

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title = "Direct semiconductor bonded 5J cell for space and terrestrial applications",

abstract = "Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/0.73 eV 5J cell with an efficiency of 37.8% under 1 sun AM1.5G spectrum and 35.1% efficiency for 1 sun AM0. The top three junctions and bottom two junctions were grown on GaAs and InP substrates, respectively, by metal organic vapor phase epitaxy. The GaAs-and InP-based cells were then direct bonded to create a low-resistance, high-transmissive interface. Both the space and terrestrial cells have high 1 sun Voc between 4.75 and 4.78 V. Initial tests of the terrestrial cells at concentration are promising with efficiencies increasing up to 10× concentration to a maximum value close to 41%.",

keywords = "Direct wafer bonding, multijunction cells",

author = "Chiu, {P. T.} and Law, {D. C.} and Woo, {R. L.} and Singer, {S. B.} and D. Bhusari and Hong, {W. D.} and A. Zakaria and J. Boisvert and S. Mesropian and King, {R. R.} and Karam, {N. H.}",

year = "2014",

month = jan,

doi = "10.1109/JPHOTOV.2013.2279336",

language = "English (US)",

volume = "4",

pages = "493--497",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

publisher = "IEEE Electron Devices Society",

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T1 - Direct semiconductor bonded 5J cell for space and terrestrial applications

AU - Chiu, P. T.

AU - Law, D. C.

AU - Woo, R. L.

AU - Singer, S. B.

AU - Bhusari, D.

AU - Hong, W. D.

AU - Zakaria, A.

AU - Boisvert, J.

AU - Mesropian, S.

AU - King, R. R.

AU - Karam, N. H.

PY - 2014/1

Y1 - 2014/1

N2 - Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/0.73 eV 5J cell with an efficiency of 37.8% under 1 sun AM1.5G spectrum and 35.1% efficiency for 1 sun AM0. The top three junctions and bottom two junctions were grown on GaAs and InP substrates, respectively, by metal organic vapor phase epitaxy. The GaAs-and InP-based cells were then direct bonded to create a low-resistance, high-transmissive interface. Both the space and terrestrial cells have high 1 sun Voc between 4.75 and 4.78 V. Initial tests of the terrestrial cells at concentration are promising with efficiencies increasing up to 10× concentration to a maximum value close to 41%.

AB - Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/0.73 eV 5J cell with an efficiency of 37.8% under 1 sun AM1.5G spectrum and 35.1% efficiency for 1 sun AM0. The top three junctions and bottom two junctions were grown on GaAs and InP substrates, respectively, by metal organic vapor phase epitaxy. The GaAs-and InP-based cells were then direct bonded to create a low-resistance, high-transmissive interface. Both the space and terrestrial cells have high 1 sun Voc between 4.75 and 4.78 V. Initial tests of the terrestrial cells at concentration are promising with efficiencies increasing up to 10× concentration to a maximum value close to 41%.

KW - Direct wafer bonding

KW - multijunction cells

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IS - 1

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ER -

Direct semiconductor bonded 5J cell for space and terrestrial applications

Abstract

Keywords

ASJC Scopus subject areas

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