Direct quantitative measurement of compositional enrichment and variations in InyGa1-yAs quantum dots

Peter Crozier; M. Catalano; R. Cingolani; A. Passaseo

doi:10.1063/1.1415414

Direct quantitative measurement of compositional enrichment and variations in In_yGa_1-yAs quantum dots

Peter Crozier
, M. Catalano
, R. Cingolani
, A. Passaseo

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Assessment of the composition of quantum dots on the nanoscale is crucial for a deeper understanding of both the growth mechanisms and the properties of these materials. In this letter, we discuss a direct method to obtain a quantitative evaluation of the In variation across nanometer-sized InGaAs quantum dots embedded in a GaAs matrix, by means of electron energy-loss spectroscopy in a scanning transmission electron microscope.

Original language	English (US)
Pages (from-to)	3170-3172
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	19
DOIs	https://doi.org/10.1063/1.1415414
State	Published - Nov 5 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1415414

Cite this

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title = "Direct quantitative measurement of compositional enrichment and variations in InyGa1-yAs quantum dots",

abstract = "Assessment of the composition of quantum dots on the nanoscale is crucial for a deeper understanding of both the growth mechanisms and the properties of these materials. In this letter, we discuss a direct method to obtain a quantitative evaluation of the In variation across nanometer-sized InGaAs quantum dots embedded in a GaAs matrix, by means of electron energy-loss spectroscopy in a scanning transmission electron microscope.",

author = "Peter Crozier and M. Catalano and R. Cingolani and A. Passaseo",

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AU - Crozier, Peter

AU - Catalano, M.

AU - Cingolani, R.

AU - Passaseo, A.

PY - 2001/11/5

Y1 - 2001/11/5

N2 - Assessment of the composition of quantum dots on the nanoscale is crucial for a deeper understanding of both the growth mechanisms and the properties of these materials. In this letter, we discuss a direct method to obtain a quantitative evaluation of the In variation across nanometer-sized InGaAs quantum dots embedded in a GaAs matrix, by means of electron energy-loss spectroscopy in a scanning transmission electron microscope.

AB - Assessment of the composition of quantum dots on the nanoscale is crucial for a deeper understanding of both the growth mechanisms and the properties of these materials. In this letter, we discuss a direct method to obtain a quantitative evaluation of the In variation across nanometer-sized InGaAs quantum dots embedded in a GaAs matrix, by means of electron energy-loss spectroscopy in a scanning transmission electron microscope.

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UR - https://www.scopus.com/pages/publications/0001563563#tab=citedBy

U2 - 10.1063/1.1415414

DO - 10.1063/1.1415414

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Direct quantitative measurement of compositional enrichment and variations in In_yGa_1-yAs quantum dots

Abstract

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