Direct metal nano-patterning using embossed solid electrolyte

Anil Kumar; Keng Hsu; Kyle Jacobs; Placid Ferreira; Nicholas Fang

doi:10.1557/proc-1156-d07-04

Direct metal nano-patterning using embossed solid electrolyte

Anil Kumar, Keng Hsu, Kyle Jacobs, Placid Ferreira, Nicholas Fang

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

In this letter we introduce a new approach to fabricating nano-scale metallic features by combining best merits of micro-forming, nanoimprint lithography, and electrochemical nanoimprinting. We study the mechanical properties of Ag₂S, a solid-state superionic conductor previously reported by Hsu et al. [1] for electrochemical nanoimprinting (S4 process), and explore its capability for embossing using a Si mold fabricated using electron-beam lithography. By circumventing the traditional route of stamp preparation using Focused Ion Beam (FIB), we greatly enhance the capability of electrochemical nanoimprinting. Using an embossed stamp, we demonstrate features <10 nm; and patterns on areas >30 mm². Application of an embossed Ag₂S stamp is a significant step towards extending the S4 process for direct metal patterning of features beyond the capability of current processes.

Original language	English (US)
Title of host publication	Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009
Publisher	Materials Research Society
Pages	141-146
Number of pages	6
ISBN (Print)	9781605111292, 9781605111643
DOIs	https://doi.org/10.1557/proc-1156-d07-04
State	Published - 2009
Event	2009 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 13 2009 → Apr 17 2009

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1156
ISSN (Print)	0272-9172

Other

Other	2009 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	4/13/09 → 4/17/09

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-1156-d07-04

Cite this

Kumar, A., Hsu, K., Jacobs, K., Ferreira, P., & Fang, N. (2009). Direct metal nano-patterning using embossed solid electrolyte. In Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009 (pp. 141-146). (Materials Research Society Symposium Proceedings; Vol. 1156). Materials Research Society. https://doi.org/10.1557/proc-1156-d07-04

Direct metal nano-patterning using embossed solid electrolyte. / Kumar, Anil; Hsu, Keng; Jacobs, Kyle et al.
Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009. Materials Research Society, 2009. p. 141-146 (Materials Research Society Symposium Proceedings; Vol. 1156).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kumar, A, Hsu, K, Jacobs, K, Ferreira, P & Fang, N 2009, Direct metal nano-patterning using embossed solid electrolyte. in Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009. Materials Research Society Symposium Proceedings, vol. 1156, Materials Research Society, pp. 141-146, 2009 MRS Spring Meeting, San Francisco, CA, United States, 4/13/09. https://doi.org/10.1557/proc-1156-d07-04

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abstract = "In this letter we introduce a new approach to fabricating nano-scale metallic features by combining best merits of micro-forming, nanoimprint lithography, and electrochemical nanoimprinting. We study the mechanical properties of Ag2S, a solid-state superionic conductor previously reported by Hsu et al. [1] for electrochemical nanoimprinting (S4 process), and explore its capability for embossing using a Si mold fabricated using electron-beam lithography. By circumventing the traditional route of stamp preparation using Focused Ion Beam (FIB), we greatly enhance the capability of electrochemical nanoimprinting. Using an embossed stamp, we demonstrate features <10 nm; and patterns on areas >30 mm2. Application of an embossed Ag2S stamp is a significant step towards extending the S4 process for direct metal patterning of features beyond the capability of current processes.",

author = "Anil Kumar and Keng Hsu and Kyle Jacobs and Placid Ferreira and Nicholas Fang",

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N2 - In this letter we introduce a new approach to fabricating nano-scale metallic features by combining best merits of micro-forming, nanoimprint lithography, and electrochemical nanoimprinting. We study the mechanical properties of Ag2S, a solid-state superionic conductor previously reported by Hsu et al. [1] for electrochemical nanoimprinting (S4 process), and explore its capability for embossing using a Si mold fabricated using electron-beam lithography. By circumventing the traditional route of stamp preparation using Focused Ion Beam (FIB), we greatly enhance the capability of electrochemical nanoimprinting. Using an embossed stamp, we demonstrate features <10 nm; and patterns on areas >30 mm2. Application of an embossed Ag2S stamp is a significant step towards extending the S4 process for direct metal patterning of features beyond the capability of current processes.

AB - In this letter we introduce a new approach to fabricating nano-scale metallic features by combining best merits of micro-forming, nanoimprint lithography, and electrochemical nanoimprinting. We study the mechanical properties of Ag2S, a solid-state superionic conductor previously reported by Hsu et al. [1] for electrochemical nanoimprinting (S4 process), and explore its capability for embossing using a Si mold fabricated using electron-beam lithography. By circumventing the traditional route of stamp preparation using Focused Ion Beam (FIB), we greatly enhance the capability of electrochemical nanoimprinting. Using an embossed stamp, we demonstrate features <10 nm; and patterns on areas >30 mm2. Application of an embossed Ag2S stamp is a significant step towards extending the S4 process for direct metal patterning of features beyond the capability of current processes.

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BT - Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009

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ER -

Direct metal nano-patterning using embossed solid electrolyte

Abstract

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