Direct imaging of impurity-induced Raman scattering in GaN

Fernando Ponce, J. W. Steeds, C. D. Dyer, G. D. Pitt

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Raman scattering experiments on silicon-doped GaN show that donor impurities quench the A1(LO) Raman line at 735 cm -1. This is due to interaction between lattice vibrations and the free carrier plasma. The spatial variation of the A1(LO) signal has been imaged directly using newly developed instrumentation. Features with dimension under on micron are observed in faceted GaN crystallites. The variation in free carrier concentration is attributed to preferential incorporation of donor impurities during growth.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsF.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar
PublisherMaterials Research Society
Number of pages6
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996


OtherProceedings of the 1996 MRS Fall Symposium
CityBoston, MA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


Dive into the research topics of 'Direct imaging of impurity-induced Raman scattering in GaN'. Together they form a unique fingerprint.

Cite this