TY - GEN
T1 - Direct gap photoluminescence and electroluminescence in Ge 1-ySny alloys
AU - Roucka, Radek
AU - Mathews, J.
AU - Menendez, Jose
AU - Kouvetakis, John
PY - 2011/11/22
Y1 - 2011/11/22
N2 - Direct-gap photoluminescence and electroluminescence has been observed in Ge1-ySny alloys. The emission in both cases is dominated by direct transitions exhibiting the expected compositional dependence. The data are consistent with the expected reduction of the Γ-L separation.
AB - Direct-gap photoluminescence and electroluminescence has been observed in Ge1-ySny alloys. The emission in both cases is dominated by direct transitions exhibiting the expected compositional dependence. The data are consistent with the expected reduction of the Γ-L separation.
UR - http://www.scopus.com/inward/record.url?scp=81355132383&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=81355132383&partnerID=8YFLogxK
U2 - 10.1109/GROUP4.2011.6053767
DO - 10.1109/GROUP4.2011.6053767
M3 - Conference contribution
AN - SCOPUS:81355132383
SN - 9781424483389
T3 - IEEE International Conference on Group IV Photonics GFP
SP - 214
EP - 216
BT - 8th IEEE International Conference on Group IV Photonics, GFP 2011
T2 - 8th IEEE International Conference on Group IV Photonics, GFP 2011
Y2 - 14 September 2011 through 16 September 2011
ER -