The performance of direct-coupled GaAs MESFET ring oscillators having a 1 μm self-aligned recessed-gate structure defined by optical contact lithography on CVD epitaxial material is reported. Propagation delays as low as 20.9 and 16.1 ps/stage have been achieved at 300 and 77 K, respectively, representing the fastest results reported to date for GaAs ring oscillators having conventional 1-μm gate technology.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering