TY - GEN
T1 - Diamond RF Diodes Towards High Power Applications
AU - Orozco, Jose Andres
AU - Brown, Jesse
AU - Zaniewski, Anna
AU - Benipal, Manpuneet K.
AU - Nemanich, Robert
AU - Thornton, Trevor
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Favorable material properties such as extreme thermal conductivity, high input power attenuation, low on resistance and high reliability make diamond among the most promising materials for high power RF applications such as limiter/receiver protector systems. RF diodes are the core component in receiver protector systems. To meet the needs of this application, we demonstrate successful diamond-based RF diode fabrication, starting with plasma enhanced chemical vapor deposition growth of p-i-n layers on <100> diamond substrates, microfabrication, and RF characterization. Diode characterization is conducted from dc to 25 GHz with results closely matching RF diode structures fabricated on <111> diamond substrates. Compared to previous <111> devices, we show off-capacitance and small signal resistance values as low as 16.1•10-9 F/cm2 and 0.65•10-3 Ohm•cm2 as well as additional pathways for further reducing these values and enabling receiver protector circuits with higher power handling requirements.
AB - Favorable material properties such as extreme thermal conductivity, high input power attenuation, low on resistance and high reliability make diamond among the most promising materials for high power RF applications such as limiter/receiver protector systems. RF diodes are the core component in receiver protector systems. To meet the needs of this application, we demonstrate successful diamond-based RF diode fabrication, starting with plasma enhanced chemical vapor deposition growth of p-i-n layers on <100> diamond substrates, microfabrication, and RF characterization. Diode characterization is conducted from dc to 25 GHz with results closely matching RF diode structures fabricated on <111> diamond substrates. Compared to previous <111> devices, we show off-capacitance and small signal resistance values as low as 16.1•10-9 F/cm2 and 0.65•10-3 Ohm•cm2 as well as additional pathways for further reducing these values and enabling receiver protector circuits with higher power handling requirements.
KW - RF
KW - diamond
KW - high power device
KW - high temperature devices
KW - receiver protect
KW - semiconductor
KW - wide bandgap materials
UR - http://www.scopus.com/inward/record.url?scp=85182924944&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85182924944&partnerID=8YFLogxK
U2 - 10.1109/ECCE53617.2023.10362199
DO - 10.1109/ECCE53617.2023.10362199
M3 - Conference contribution
AN - SCOPUS:85182924944
T3 - 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023
SP - 6045
EP - 6047
BT - 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023
Y2 - 29 October 2023 through 2 November 2023
ER -