Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor

Engineering

• Band Gap 100%
• Buffer Layer 50%
• Chemical Vapor Deposition 100%
• Deposited Film 50%
• Epitaxial Film 100%
• Growth Process 100%
• Infrared Region 100%
• Material Quality 50%
• Mm Diameter 50%
• Photonic Devices 50%
• Quality Issue 50%
• Silicon Substrate 50%
• Sn Content 50%
• Strain Relaxation 50%
• Vapor Deposition 100%

Material Science

• Buffer Layer 50%
• Chemical Vapor Deposition 100%
• Epitaxial Film 100%
• Epitaxy 50%
• Film 100%
• Germanium 50%
• Luminescence 100%
• Optical Device 50%
• Photoluminescence 50%
• Silicon 50%
• Surface (Surface Science) 50%
• Tin 50%

Keyphrases

• Germanium-tin 33%
• Two-step Growth 33%