Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor

Keyphrases

• Luminescence 100%
• Direct Band Gap 100%
• Mid-infrared 100%
• GeSn 100%
• Epitaxial Film 100%
• Infrared Region 100%
• Chemical Vapor Deposition Reactor 100%
• Commercial Compounds 100%
• Growth Process 66%
• GeSn Film 66%
• Device Application 33%
• Material Quality 33%
• Buffer Layer 33%
• Quality Issues 33%
• Photoluminescence Intensity 33%
• Photonic Devices 33%
• Electronic Devices 33%
• Commercial Production 33%
• Epitaxy 33%
• Silicon Substrate 33%
• Sn Content 33%
• Strain Relaxation 33%
• Sn Incorporation 33%
• Ge Buffer 33%
• Bilayer Structure 33%
• Single-step Growth 33%
• Germanium-tin 33%
• Two-step Growth 33%
• High Photoluminescence 33%

Material Science

• Film 100%
• Luminescence 100%
• Chemical Vapor Deposition 100%
• Epitaxial Film 100%
• Tin 50%
• Buffer Layer 50%
• Photoluminescence 50%
• Optical Device 50%
• Epitaxy 50%
• Germanium 50%
• Silicon Substrate 50%