@inproceedings{929ccf3d736b42e2b26a0da2bd87aa2a,
title = "Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology",
abstract = "The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300× suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.",
author = "Williams, \{Joshua J.\} and Heather McFavilen and Fischer, \{Alec M.\} and Ding Ding and Young, \{Steven R.\} and Ehsan Vadiee and Fernando Ponce and Chantal Arena and Christiana Honsberg and Stephen Goodnick",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",
year = "2017",
doi = "10.1109/PVSC.2017.8366449",
language = "English (US)",
series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "604--607",
booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
}