Design and modeling of Scandium-alloyed wurtzite III-nitrides based ferroelectric heterostructure for power efficient applications

The transient negative capacitance (TNC) effect observed in ferroelectric materials offers a promising approach to reducing energy consumption in field-effect transistors. Scandium-alloyed wurtzite III-nitrides-based ferroelectric high electron mobility transistor (FerroHEMT) which combines the high piezoelectric coefficients and low coercive field ferroelectricity in ScAlN with the TNC effects, enables both high on-current and high-speed characteristics. In this paper, by self-consistently solving the Poisson equation and electron statistics, we derive the analytical compact model for charge–voltage (Q–V) profile for ScAlN/AlN/GaN 1D structure. The model accuracy is demonstrated by comparing the results against experimental and numerical simulation. The Verilog-A model can be embedded in Cadence Spectre for DC and Transient simulation.