The RPECVD process has been extended to deposit a-Si,C:H and μc-Si,C:H. The degree of crystallinity in the μc-Si,C:H alloys is lower than in μc-Si:H films deposited under comparable conditions. Attempts to dope μc-Si,C:H alloys indicate that high levels of both B and P doping can promote a transition from μc-Si,C:H to a-Si,C:H. Raman spectra indicate that crystallites in the μc-Si,C:H alloys are Si, while IR measurements show that the amorphous component is an a-Si,C:H alloy.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry