TY - GEN
T1 - Demonstration of Generative Adversarial Network by Intrinsic Random Noises of Analog RRAM Devices
AU - Lin, Yudeng
AU - Wu, Huaqiang
AU - Gao, Bin
AU - Yao, Peng
AU - Wu, Wei
AU - Zhang, Qingtian
AU - Zhang, Xiang
AU - Li, Xinyi
AU - Li, Fuhai
AU - Lu, Jiwu
AU - Li, Gezi
AU - Yu, Shimeng
AU - Qian, He
N1 - Funding Information:
ACKNOWLEDGMENT This work is supported in part by the MOST of China (2016YFA0201801), Beijing Innovation Center for Future Chip (ICFC), Beijing Municipal Science and Technology Project (D161100001716002, Z181100003218001), and NSFC (61674087, 61674089, 61674092, 61076115).
Publisher Copyright:
© 2018 IEEE.
PY - 2019/1/16
Y1 - 2019/1/16
N2 - For the first time, Generative Adversarial Network (GAN) is experimentally demonstrated on 1kb analog RRAM array. After online training, the network can generate different patterns of digital numbers. The intrinsic random noises of analog RRAM device are utilized as the input of the neural network to improve the diversity of the generated numbers. The impacts of read and write noises on the performance of GAN are analyzed. Optimized methodology is developed to mitigate the excessive noise effect on RRAM based GAN. This work proves that RRAM is suitable for the application of GAN. It also paves a new way to take advantage of the non-ideal effects of RRAM devices.
AB - For the first time, Generative Adversarial Network (GAN) is experimentally demonstrated on 1kb analog RRAM array. After online training, the network can generate different patterns of digital numbers. The intrinsic random noises of analog RRAM device are utilized as the input of the neural network to improve the diversity of the generated numbers. The impacts of read and write noises on the performance of GAN are analyzed. Optimized methodology is developed to mitigate the excessive noise effect on RRAM based GAN. This work proves that RRAM is suitable for the application of GAN. It also paves a new way to take advantage of the non-ideal effects of RRAM devices.
UR - http://www.scopus.com/inward/record.url?scp=85061786452&partnerID=8YFLogxK
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U2 - 10.1109/IEDM.2018.8614483
DO - 10.1109/IEDM.2018.8614483
M3 - Conference contribution
AN - SCOPUS:85061786452
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 3.4.1-3.4.4
BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Y2 - 1 December 2018 through 5 December 2018
ER -