Void growth and coalescence is fundamental to understanding how damage evolves in metal systems. In ductile materials, fracture involves void nucleation, growth and coalescence. In this contribution, void growth has been investigated as a function of crystallographic loading orientation coupled with strain rate and cell size effects for single crystal aluminum. Molecular dynamics simulations were used to examine void growth in single crystal Al for different strain rates, void sizes, crystal orientations and simulation cell sizes. In particular, uniaxial tensile loading of different crystal orientations is used to capture the influence of Schmid and non-Schmid effects, and single slip vs multiple slip regimes. The simulation results show how crystallographic orientation affects the yield stress corresponding to dislocation nucleation from the void surface in perfect FCC lattice. A size scale effect related to the volume-averaged yield stress in the specimen was observed. The effect of crystallographic orientation was evident as different dislocation patterns/shear loops occurred for different loading orientations. Last, this study provides fodder for understanding the role of resolved stress components and loading orientation on the nucleation and growth of shear loops.