Defect pair formation by implantation-induced stresses in high-dose oxygen implanted silicon-on-insulator material

Keyphrases

• Dislocation 100%
• High Dose 100%
• Pair Formation 100%
• Defect Pair 100%
• Induced Stress 100%
• Silicon-on-insulator 100%
• Implanted Silicon 100%
• Half Loop 100%
• Through-thickness 66%
• Defect Density 33%
• Annealing 33%
• Induced Damage 33%
• Stress-driven 33%
• Transmission Electron Microscopy 33%
• Critical Stress 33%
• Annealing Temperature 33%
• High-resolution X-ray Diffraction (HRXRD) 33%
• Surface Strain 33%
• SIMOX 33%
• Defect Microstructures 33%
• Density Increase 33%
• Density Reduction 33%
• Pair Density 33%

Material Science

• Silicon on Insulator Material 100%
• Density 50%
• Defect Density 50%
• Microstructure Defect 50%
• Transmission Electron Microscopy 50%
• Annealing 50%
• Surface (Surface Science) 50%