Defect formation near GaN surfaces and interfaces

Keyphrases

• Defect Formation 100%
• GaN Surface 100%
• Surface Science Techniques 100%
• Phase Change 50%
• Band Gap 50%
• Heterostructure 50%
• Reaction Products 50%
• Free Surface 50%
• Photoluminescence Spectroscopy 50%
• Defect States 50%
• Metal-induced 50%
• Charge Transfer 50%
• Indium Gallium Nitride (InGaN) 50%
• Ultra-high Vacuum 50%
• GaN Heterostructure 50%
• InGaN Quantum Wells 50%
• Low-energy Electrons 50%
• Native Defects 50%
• Interface Planes 50%
• Deep Level Defects 50%
• Local Dipole 50%
• Interface Phase 50%

Engineering

• Deep Level 100%
• Heterostructures 66%
• Nanoscale 33%
• Quantum Well 33%
• Spatial Variation 33%
• Free Surface 33%
• Energy Electron 33%
• Native Defect 33%
• Band Gap 33%