Current-Sweep Operation on Nonlinear Selectorless RRAM for Multilevel Cell Applications

Ying Chen Chen; Chih Yang Lin; Hyojong Cho; Sungjun Kim; Burt Fowler; Jack C. Lee

doi:10.1007/s11664-020-07987-1

Current-Sweep Operation on Nonlinear Selectorless RRAM for Multilevel Cell Applications

Ying Chen Chen, Chih Yang Lin, Hyojong Cho, Sungjun Kim, Burt Fowler, Jack C. Lee

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Bilayer selectorless resistive random-access memories (RRAM) have been demonstrated by utilizing the intrinsic nonlinear resistive switching (RS) characteristics, without additional transistor or a selector integration. The bilayer structures, i.e. high-k layer/low-k layer stacks, are highly scalable while suppressing the sneak path currents (SPC) and reading error in the crossbar RRAM array. The nonlinearity (NL) modulation is also investigated by different operating schemes, and a multilevel cell application is demonstrated with the current-sweep method. The results provide additional insights into the development and optimization of bilayer selectorless RRAMs with high nonlinearity, good memory window, and low switching energy (∼ 40 pJ/bit), which enable the high-density storage and low-power crossbar array memory applications.

Original language	English (US)
Pages (from-to)	3499-3503
Number of pages	5
Journal	Journal of Electronic Materials
Volume	49
Issue number	6
DOIs	https://doi.org/10.1007/s11664-020-07987-1
State	Published - Jun 1 2020
Externally published	Yes

Keywords

crosspoint
oxide
RRAM
selectorless
sneak path current

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-020-07987-1

Cite this

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title = "Current-Sweep Operation on Nonlinear Selectorless RRAM for Multilevel Cell Applications",

abstract = "Bilayer selectorless resistive random-access memories (RRAM) have been demonstrated by utilizing the intrinsic nonlinear resistive switching (RS) characteristics, without additional transistor or a selector integration. The bilayer structures, i.e. high-k layer/low-k layer stacks, are highly scalable while suppressing the sneak path currents (SPC) and reading error in the crossbar RRAM array. The nonlinearity (NL) modulation is also investigated by different operating schemes, and a multilevel cell application is demonstrated with the current-sweep method. The results provide additional insights into the development and optimization of bilayer selectorless RRAMs with high nonlinearity, good memory window, and low switching energy (∼ 40 pJ/bit), which enable the high-density storage and low-power crossbar array memory applications.",

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author = "Chen, {Ying Chen} and Lin, {Chih Yang} and Hyojong Cho and Sungjun Kim and Burt Fowler and Lee, {Jack C.}",

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AU - Chen, Ying Chen

AU - Lin, Chih Yang

AU - Cho, Hyojong

AU - Kim, Sungjun

AU - Fowler, Burt

AU - Lee, Jack C.

PY - 2020/6/1

Y1 - 2020/6/1

N2 - Bilayer selectorless resistive random-access memories (RRAM) have been demonstrated by utilizing the intrinsic nonlinear resistive switching (RS) characteristics, without additional transistor or a selector integration. The bilayer structures, i.e. high-k layer/low-k layer stacks, are highly scalable while suppressing the sneak path currents (SPC) and reading error in the crossbar RRAM array. The nonlinearity (NL) modulation is also investigated by different operating schemes, and a multilevel cell application is demonstrated with the current-sweep method. The results provide additional insights into the development and optimization of bilayer selectorless RRAMs with high nonlinearity, good memory window, and low switching energy (∼ 40 pJ/bit), which enable the high-density storage and low-power crossbar array memory applications.

AB - Bilayer selectorless resistive random-access memories (RRAM) have been demonstrated by utilizing the intrinsic nonlinear resistive switching (RS) characteristics, without additional transistor or a selector integration. The bilayer structures, i.e. high-k layer/low-k layer stacks, are highly scalable while suppressing the sneak path currents (SPC) and reading error in the crossbar RRAM array. The nonlinearity (NL) modulation is also investigated by different operating schemes, and a multilevel cell application is demonstrated with the current-sweep method. The results provide additional insights into the development and optimization of bilayer selectorless RRAMs with high nonlinearity, good memory window, and low switching energy (∼ 40 pJ/bit), which enable the high-density storage and low-power crossbar array memory applications.

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KW - sneak path current

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Current-Sweep Operation on Nonlinear Selectorless RRAM for Multilevel Cell Applications

Abstract

Keywords

ASJC Scopus subject areas

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