Abstract
We demonstrate current-induced switching effects in a single exchanged-biased ferromagnetic layer. A nanodomain can be switched within the ferromagnetic layer by a spin-polarized current injected through a point contact. The high resistance of the hysteretic switching is due to the formation of a domain wall between the nanodomain and the rest of the layer. The switching behavior observed in a single layer is a type of spin-transfer torque effect which is the inverse effect of domain-wall magnetoresistance. At room temperature, nonhysteretic switching behavior with a broad switching current density range is observed.
Original language | English (US) |
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Article number | 10C709 |
Journal | Journal of Applied Physics |
Volume | 97 |
Issue number | 10 |
DOIs | |
State | Published - May 15 2005 |
ASJC Scopus subject areas
- Physics and Astronomy(all)