Abstract
A study of the effects of C and Ge additions on the Cu catalyzed oxidation of Si has been performed. It was found that the addition of Ge alone resulted in a marked slowdown in the rate of oxygen incorporation; during the first three days of the experiment the rate of oxygen incorporation was 25 times higher in the Si reference sample. The Ge was incorporated into the oxide. Small amounts of C added to the SiGe compound have a more pronounced effect. Carbon concentrations of less than '.. 2% prevent oxidation of SiGeC for periods of at least one month. Copper enhanced oxidation of Si(100) has produced oxides of several hundred nanometers in under one month.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 874-876 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 70 |
| Issue number | 7 |
| DOIs | |
| State | Published - Feb 17 1997 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)