Crystallization in hafnia- and zirconia-based systems

S. V. Ushakov; A. Navrotsky; Y. Yang; S. Stemmer; K. Kukli; M. Ritala; M. A. Leskelä; P. Fejes; A. Demkov; C. Wang; B. Y. Nguyen; D. Triyoso; P. Tobin

doi:10.1002/pssb.200404935

Crystallization in hafnia- and zirconia-based systems

S. V. Ushakov, A. Navrotsky, Y. Yang, S. Stemmer, K. Kukli, M. Ritala, M. A. Leskelä, P. Fejes, A. Demkov, C. Wang, B. Y. Nguyen, D. Triyoso, P. Tobin

Research output: Contribution to journal › Article › peer-review

152 Scopus citations

Abstract

Crystallization of hafnia and zirconia and their alloys with silica and lanthana was studied in bulk and thin film samples by thermal analysis, X-ray diffraction and electron microscopy. Crystallization temperatures of hafnia and zirconia increase by more than 300°C with increase of surface/interface area of the amorphous phase. Crystallization temperatures of zirconia and hafnia alloys with silica and lanthana increase with dopant content and exceed 900°C for 50 mol% SiO₂ and LaO_1.5. Energies for tetragonal HfO₂ and ZrO₂ interfaces with amorphous silica were derived from their crystallization enthalpies from silicates as 0.25±0.08 and 0.13±0.07 J/m², respectively. The crystallization pathways in bulk powders and films of zirconia and hafnia can be interpreted as resulting from thermodynamic stabilization by the surface energy term of tetragonal and amorphous phases over monoclinic.

Original language	English (US)
Pages (from-to)	2268-2278
Number of pages	11
Journal	Physica Status Solidi (B) Basic Research
Volume	241
Issue number	10
DOIs	https://doi.org/10.1002/pssb.200404935
State	Published - Aug 2004
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Crystallization in hafnia- and zirconia-based systems",

abstract = "Crystallization of hafnia and zirconia and their alloys with silica and lanthana was studied in bulk and thin film samples by thermal analysis, X-ray diffraction and electron microscopy. Crystallization temperatures of hafnia and zirconia increase by more than 300°C with increase of surface/interface area of the amorphous phase. Crystallization temperatures of zirconia and hafnia alloys with silica and lanthana increase with dopant content and exceed 900°C for 50 mol% SiO2 and LaO1.5. Energies for tetragonal HfO2 and ZrO2 interfaces with amorphous silica were derived from their crystallization enthalpies from silicates as 0.25±0.08 and 0.13±0.07 J/m2, respectively. The crystallization pathways in bulk powders and films of zirconia and hafnia can be interpreted as resulting from thermodynamic stabilization by the surface energy term of tetragonal and amorphous phases over monoclinic.",

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year = "2004",

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doi = "10.1002/pssb.200404935",

language = "English (US)",

volume = "241",

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T1 - Crystallization in hafnia- and zirconia-based systems

AU - Ushakov, S. V.

AU - Navrotsky, A.

AU - Yang, Y.

AU - Stemmer, S.

AU - Kukli, K.

AU - Ritala, M.

AU - Leskelä, M. A.

AU - Fejes, P.

AU - Demkov, A.

AU - Wang, C.

AU - Nguyen, B. Y.

AU - Triyoso, D.

AU - Tobin, P.

PY - 2004/8

Y1 - 2004/8

N2 - Crystallization of hafnia and zirconia and their alloys with silica and lanthana was studied in bulk and thin film samples by thermal analysis, X-ray diffraction and electron microscopy. Crystallization temperatures of hafnia and zirconia increase by more than 300°C with increase of surface/interface area of the amorphous phase. Crystallization temperatures of zirconia and hafnia alloys with silica and lanthana increase with dopant content and exceed 900°C for 50 mol% SiO2 and LaO1.5. Energies for tetragonal HfO2 and ZrO2 interfaces with amorphous silica were derived from their crystallization enthalpies from silicates as 0.25±0.08 and 0.13±0.07 J/m2, respectively. The crystallization pathways in bulk powders and films of zirconia and hafnia can be interpreted as resulting from thermodynamic stabilization by the surface energy term of tetragonal and amorphous phases over monoclinic.

AB - Crystallization of hafnia and zirconia and their alloys with silica and lanthana was studied in bulk and thin film samples by thermal analysis, X-ray diffraction and electron microscopy. Crystallization temperatures of hafnia and zirconia increase by more than 300°C with increase of surface/interface area of the amorphous phase. Crystallization temperatures of zirconia and hafnia alloys with silica and lanthana increase with dopant content and exceed 900°C for 50 mol% SiO2 and LaO1.5. Energies for tetragonal HfO2 and ZrO2 interfaces with amorphous silica were derived from their crystallization enthalpies from silicates as 0.25±0.08 and 0.13±0.07 J/m2, respectively. The crystallization pathways in bulk powders and films of zirconia and hafnia can be interpreted as resulting from thermodynamic stabilization by the surface energy term of tetragonal and amorphous phases over monoclinic.

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Crystallization in hafnia- and zirconia-based systems

Abstract

ASJC Scopus subject areas

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