Correlation field analysis of the influence of device geometry and bulk disorder on electron interference in quantum wires

Yuichi Ochiai; Kazunuki Yamamoto; Taizoh Onishi; Mitsuo Kawabe; Koji Ishibashi; Jonathan P. Bird; Yoshinobu Aoyagi; Takuo Sugano; David K. Ferry

Correlation field analysis of the influence of device geometry and bulk disorder on electron interference in quantum wires

Yuichi Ochiai, Kazunuki Yamamoto, Taizoh Onishi, Mitsuo Kawabe, Koji Ishibashi, Jonathan P. Bird, Yoshinobu Aoyagi, Takuo Sugano, David K. Ferry

Research output: Chapter in Book/Report/Conference proceeding › Chapter

3 Scopus citations

Abstract

We analyze the magnetic field dependence of the correlation field B_c of universal conductance fluctuations (UCF), observed in GaAs/AlGaAs quantum wires. At sufficiently high magnetic fields, the Landau level quantization is resolved, and B_c is found to increase as a power law of magnetic field with an exponent which depends sensitively upon temperature. We show that this behavior results from a change in the nature of the (zero field) phase-coherent region for electron interference in the quantum wire; at high temperatures the phase-breaking length is less than the width, and the region is determined by the bulk impurities, while at lower temperatures, it is strongly influenced by the boundaries of the wire. We compare our results with recent theoretical predictions for the UCF at high magnetic fields, and show that the correlation analysis field provides a valuable tool for analyzing electron interference in quantum wires.

Original language	English (US)
Title of host publication	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
Editors	Seigo Tarucha, Yasuhiko Arakawa, Masao Fukuma, Kazuhito Furuya, Yoshiji Horikoshi, al et al
Place of Publication	Minato-ku, Japan
Publisher	JJAP
Pages	1339-1341
Number of pages	3
Volume	34
Edition	2 B
State	Published - Feb 1995
Event	Proceedings of the 1994 International Conference on Solid State Devices and Materials (SSDM'94) - Yokohama, Jpn Duration: Aug 23 1994 → Aug 26 1994

Other

Other	Proceedings of the 1994 International Conference on Solid State Devices and Materials (SSDM'94)
City	Yokohama, Jpn
Period	8/23/94 → 8/26/94

ASJC Scopus subject areas

Engineering(all)

Cite this

Ochiai, Y., Yamamoto, K., Onishi, T., Kawabe, M., Ishibashi, K., Bird, J. P., Aoyagi, Y., Sugano, T., & Ferry, D. K. (1995). Correlation field analysis of the influence of device geometry and bulk disorder on electron interference in quantum wires. In S. Tarucha, Y. Arakawa, M. Fukuma, K. Furuya, Y. Horikoshi, & A. et al (Eds.), Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (2 B ed., Vol. 34, pp. 1339-1341). JJAP.

Correlation field analysis of the influence of device geometry and bulk disorder on electron interference in quantum wires. / Ochiai, Yuichi; Yamamoto, Kazunuki; Onishi, Taizoh et al.
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. ed. / Seigo Tarucha; Yasuhiko Arakawa; Masao Fukuma; Kazuhito Furuya; Yoshiji Horikoshi; al et al. Vol. 34 2 B. ed. Minato-ku, Japan: JJAP, 1995. p. 1339-1341.

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Ochiai, Y, Yamamoto, K, Onishi, T, Kawabe, M, Ishibashi, K, Bird, JP, Aoyagi, Y, Sugano, T & Ferry, DK 1995, Correlation field analysis of the influence of device geometry and bulk disorder on electron interference in quantum wires. in S Tarucha, Y Arakawa, M Fukuma, K Furuya, Y Horikoshi & A et al (eds), Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 2 B edn, vol. 34, JJAP, Minato-ku, Japan, pp. 1339-1341, Proceedings of the 1994 International Conference on Solid State Devices and Materials (SSDM'94), Yokohama, Jpn, 8/23/94.

Ochiai Y, Yamamoto K, Onishi T, Kawabe M, Ishibashi K, Bird JP et al. Correlation field analysis of the influence of device geometry and bulk disorder on electron interference in quantum wires. In Tarucha S, Arakawa Y, Fukuma M, Furuya K, Horikoshi Y, et al A, editors, Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 2 B ed. Vol. 34. Minato-ku, Japan: JJAP. 1995. p. 1339-1341

Ochiai, Yuichi ; Yamamoto, Kazunuki ; Onishi, Taizoh et al. / Correlation field analysis of the influence of device geometry and bulk disorder on electron interference in quantum wires. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. editor / Seigo Tarucha ; Yasuhiko Arakawa ; Masao Fukuma ; Kazuhito Furuya ; Yoshiji Horikoshi ; al et al. Vol. 34 2 B. ed. Minato-ku, Japan : JJAP, 1995. pp. 1339-1341

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abstract = "We analyze the magnetic field dependence of the correlation field Bc of universal conductance fluctuations (UCF), observed in GaAs/AlGaAs quantum wires. At sufficiently high magnetic fields, the Landau level quantization is resolved, and Bc is found to increase as a power law of magnetic field with an exponent which depends sensitively upon temperature. We show that this behavior results from a change in the nature of the (zero field) phase-coherent region for electron interference in the quantum wire; at high temperatures the phase-breaking length is less than the width, and the region is determined by the bulk impurities, while at lower temperatures, it is strongly influenced by the boundaries of the wire. We compare our results with recent theoretical predictions for the UCF at high magnetic fields, and show that the correlation analysis field provides a valuable tool for analyzing electron interference in quantum wires.",

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AU - Ochiai, Yuichi

AU - Yamamoto, Kazunuki

AU - Onishi, Taizoh

AU - Kawabe, Mitsuo

AU - Ishibashi, Koji

AU - Bird, Jonathan P.

AU - Aoyagi, Yoshinobu

AU - Sugano, Takuo

AU - Ferry, David K.

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N2 - We analyze the magnetic field dependence of the correlation field Bc of universal conductance fluctuations (UCF), observed in GaAs/AlGaAs quantum wires. At sufficiently high magnetic fields, the Landau level quantization is resolved, and Bc is found to increase as a power law of magnetic field with an exponent which depends sensitively upon temperature. We show that this behavior results from a change in the nature of the (zero field) phase-coherent region for electron interference in the quantum wire; at high temperatures the phase-breaking length is less than the width, and the region is determined by the bulk impurities, while at lower temperatures, it is strongly influenced by the boundaries of the wire. We compare our results with recent theoretical predictions for the UCF at high magnetic fields, and show that the correlation analysis field provides a valuable tool for analyzing electron interference in quantum wires.

AB - We analyze the magnetic field dependence of the correlation field Bc of universal conductance fluctuations (UCF), observed in GaAs/AlGaAs quantum wires. At sufficiently high magnetic fields, the Landau level quantization is resolved, and Bc is found to increase as a power law of magnetic field with an exponent which depends sensitively upon temperature. We show that this behavior results from a change in the nature of the (zero field) phase-coherent region for electron interference in the quantum wire; at high temperatures the phase-breaking length is less than the width, and the region is determined by the bulk impurities, while at lower temperatures, it is strongly influenced by the boundaries of the wire. We compare our results with recent theoretical predictions for the UCF at high magnetic fields, and show that the correlation analysis field provides a valuable tool for analyzing electron interference in quantum wires.

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A2 - Fukuma, Masao

A2 - Furuya, Kazuhito

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T2 - Proceedings of the 1994 International Conference on Solid State Devices and Materials (SSDM'94)

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ER -

Correlation field analysis of the influence of device geometry and bulk disorder on electron interference in quantum wires

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