Correlation between lifetime curve and performance of amorphous silicon/ crystalline silicon heterostructure solar cell

Kunal Ghosh, Stanislau Herasimenka, Bill Dauksher, Stuart Bowden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Detailed balance calculations are prevalently used to calculate the thermodynamic limit of performance of photovoltaic devices. This work combines the detailed balance calculations with the lifetime curve to determine the limiting performance of silicon heterostructure solar cell. The detailed balance model uses the state-of-the-art values for the recombination coefficients. The calculation shows that for an undoped silicon with only intrinsic (radiative and auger) recombination mechanisms considered, the efficiency limit is 29.63 % at 26 μm. However, the value changes with the inclusion of the extrinsic recombination processes that occurs due to the presence of surfaces and defects within crystalline silicon.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1232-1237
Number of pages6
ISBN (Print)9781479932993
DOIs
StatePublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/TerritoryUnited States
CityTampa, FL
Period6/16/136/21/13

Keywords

  • A-Si/c-Si heterostructure
  • Detailed balance
  • Efficiency limit
  • Lifetime measurement

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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