Correlated structural, electronic, and optical properties of AlN/GaN multiple quantum disks in GaN nanowires

Alec M. Fischer; Kewei W. Sun; Fernando Ponce; Rudeesun Songmuang; Eva Monroy

doi:10.1143/APEX.5.025001

Correlated structural, electronic, and optical properties of AlN/GaN multiple quantum disks in GaN nanowires

Alec M. Fischer, Kewei W. Sun, Fernando Ponce, Rudeesun Songmuang, Eva Monroy

Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The electronic properties of GaN nanowires containing AlN/GaN multiple quantum disks, grown on Si(111) and luminescing at 3.55 eV, have been studied with nanometric resolution and have been correlated with their structural and optical characteristics. Profiles of the electrostatic potential across the quantum disks have been obtained by electron holography. Such profiles suggest an AlN/GaN conduction band offset of ∼1:5 eV and an average internal polarization field in the quantum disks of ∼1:8 MV/cm. A simulated energy band profile based on these results agrees with the luminescence measurements.

Original language	English (US)
Article number	025001
Journal	Applied Physics Express
Volume	5
Issue number	2
DOIs	https://doi.org/10.1143/APEX.5.025001
State	Published - Feb 2012

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Engineering(all)
Physics and Astronomy(all)

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title = "Correlated structural, electronic, and optical properties of AlN/GaN multiple quantum disks in GaN nanowires",

abstract = "The electronic properties of GaN nanowires containing AlN/GaN multiple quantum disks, grown on Si(111) and luminescing at 3.55 eV, have been studied with nanometric resolution and have been correlated with their structural and optical characteristics. Profiles of the electrostatic potential across the quantum disks have been obtained by electron holography. Such profiles suggest an AlN/GaN conduction band offset of ∼1:5 eV and an average internal polarization field in the quantum disks of ∼1:8 MV/cm. A simulated energy band profile based on these results agrees with the luminescence measurements.",

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T1 - Correlated structural, electronic, and optical properties of AlN/GaN multiple quantum disks in GaN nanowires

AU - Fischer, Alec M.

AU - Sun, Kewei W.

AU - Ponce, Fernando

AU - Songmuang, Rudeesun

AU - Monroy, Eva

PY - 2012/2

Y1 - 2012/2

N2 - The electronic properties of GaN nanowires containing AlN/GaN multiple quantum disks, grown on Si(111) and luminescing at 3.55 eV, have been studied with nanometric resolution and have been correlated with their structural and optical characteristics. Profiles of the electrostatic potential across the quantum disks have been obtained by electron holography. Such profiles suggest an AlN/GaN conduction band offset of ∼1:5 eV and an average internal polarization field in the quantum disks of ∼1:8 MV/cm. A simulated energy band profile based on these results agrees with the luminescence measurements.

AB - The electronic properties of GaN nanowires containing AlN/GaN multiple quantum disks, grown on Si(111) and luminescing at 3.55 eV, have been studied with nanometric resolution and have been correlated with their structural and optical characteristics. Profiles of the electrostatic potential across the quantum disks have been obtained by electron holography. Such profiles suggest an AlN/GaN conduction band offset of ∼1:5 eV and an average internal polarization field in the quantum disks of ∼1:8 MV/cm. A simulated energy band profile based on these results agrees with the luminescence measurements.

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Correlated structural, electronic, and optical properties of AlN/GaN multiple quantum disks in GaN nanowires

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