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Control of bismuth volatility in SBT by vanadium doping
Robert Barz
, Deborah A. Neumayer
, Prashant Majhi
, Changgong Wang
,
Sandwip Dey
Chemical Engineering
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
4
Scopus citations
Overview
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Keyphrases
Volatility
100%
Bismuth
100%
Vanadium Doping
100%
V Doping
50%
Vanadium
25%
Silica
12%
Fatigue Properties
12%
Si Wafer
12%
Structural Damage
12%
Free Energy
12%
Pentavalent
12%
Ferroelectric Memory
12%
Sol-gel Processing
12%
Oxygen Vacancy Formation
12%
Polycrystalline Morphology
12%
SrBi2Ta2O9
12%
Acceptor Doping
12%
Tetravalent
12%
Pt Bottom Electrode
12%
SBT Thin Films
12%
Nominal Composition
12%
Vanadium(V)
12%
Strontium Bismuth Tantalate
12%
Electron Binding Energy
12%
Polarization Fatigue
12%
Forming Gas Annealing
12%
Material Science
Bismuth
100%
Vanadium
100%
Ferroelectric Material
22%
X-Ray Diffraction
11%
Thin Films
11%
Scanning Electron Microscopy
11%
Film
11%
Tantalate
11%
Acceptor Doping
11%
Oxygen Vacancy
11%
Strontium
11%
Sol-Gel Processing
11%
Phase Composition
11%
Surface (Surface Science)
11%