Contribution of single InGaAs quantum wells to the guided mode dispersion of InGaAs/GaAs/AlGaAs waveguides: Model and experimental results

V. Pacradouni; R. Morin; M. Kanskar; Jeff F. Young; S. R. Johnson; T. Tiedje

doi:10.1063/1.363560

Contribution of single InGaAs quantum wells to the guided mode dispersion of InGaAs/GaAs/AlGaAs waveguides: Model and experimental results

V. Pacradouni, R. Morin, M. Kanskar, Jeff F. Young, S. R. Johnson, T. Tiedje

Research output: Contribution to journal › Review article › peer-review

Abstract

High resolution Fabry-Perot fringe spacing measurements are used to determine the group index dispersion of TE and TM polarized modes in single quantum well InGaAs/AlGaAs/GaAs graded index separate confinement heterostructure waveguides. The TE mode data, over a ∼ 175 nm range below the quantum well band gap, is compared with model calculations of guided mode dispersion using existing empirical formulas for the index dispersion of Al_xGa_1-xAs and GaAs, and different phenomenological expressions for the TE index dispersion of the InGaAs quantum well. A satisfactory fit is obtained when the quantum well is modeled as a two-dimensional set of equal strength oscillators with a constant density of states, plus a single 1S excitonic level.

Original language	English (US)
Pages (from-to)	6039-6044
Number of pages	6
Journal	Journal of Applied Physics
Volume	80
Issue number	10
DOIs	https://doi.org/10.1063/1.363560
State	Published - Nov 15 1996
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Contribution of single InGaAs quantum wells to the guided mode dispersion of InGaAs/GaAs/AlGaAs waveguides: Model and experimental results",

abstract = "High resolution Fabry-Perot fringe spacing measurements are used to determine the group index dispersion of TE and TM polarized modes in single quantum well InGaAs/AlGaAs/GaAs graded index separate confinement heterostructure waveguides. The TE mode data, over a ∼ 175 nm range below the quantum well band gap, is compared with model calculations of guided mode dispersion using existing empirical formulas for the index dispersion of AlxGa1-xAs and GaAs, and different phenomenological expressions for the TE index dispersion of the InGaAs quantum well. A satisfactory fit is obtained when the quantum well is modeled as a two-dimensional set of equal strength oscillators with a constant density of states, plus a single 1S excitonic level.",

author = "V. Pacradouni and R. Morin and M. Kanskar and Young, {Jeff F.} and Johnson, {S. R.} and T. Tiedje",

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T1 - Contribution of single InGaAs quantum wells to the guided mode dispersion of InGaAs/GaAs/AlGaAs waveguides

T2 - Model and experimental results

AU - Pacradouni, V.

AU - Morin, R.

AU - Kanskar, M.

AU - Young, Jeff F.

AU - Johnson, S. R.

AU - Tiedje, T.

PY - 1996/11/15

Y1 - 1996/11/15

N2 - High resolution Fabry-Perot fringe spacing measurements are used to determine the group index dispersion of TE and TM polarized modes in single quantum well InGaAs/AlGaAs/GaAs graded index separate confinement heterostructure waveguides. The TE mode data, over a ∼ 175 nm range below the quantum well band gap, is compared with model calculations of guided mode dispersion using existing empirical formulas for the index dispersion of AlxGa1-xAs and GaAs, and different phenomenological expressions for the TE index dispersion of the InGaAs quantum well. A satisfactory fit is obtained when the quantum well is modeled as a two-dimensional set of equal strength oscillators with a constant density of states, plus a single 1S excitonic level.

AB - High resolution Fabry-Perot fringe spacing measurements are used to determine the group index dispersion of TE and TM polarized modes in single quantum well InGaAs/AlGaAs/GaAs graded index separate confinement heterostructure waveguides. The TE mode data, over a ∼ 175 nm range below the quantum well band gap, is compared with model calculations of guided mode dispersion using existing empirical formulas for the index dispersion of AlxGa1-xAs and GaAs, and different phenomenological expressions for the TE index dispersion of the InGaAs quantum well. A satisfactory fit is obtained when the quantum well is modeled as a two-dimensional set of equal strength oscillators with a constant density of states, plus a single 1S excitonic level.

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Contribution of single InGaAs quantum wells to the guided mode dispersion of InGaAs/GaAs/AlGaAs waveguides: Model and experimental results

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