Conductive-bridge memory (CBRAM) with excellent high-temperature retention

J. R. Jameson; P. Blanchard; C. Cheng; J. Dinh; A. Gallo; V. Gopalakrishnan; C. Gopalan; B. Guichet; S. Hsu; D. Kamalanathan; D. Kim; F. Koushan; M. Kwan; K. Law; D. Lewis; Y. Ma; V. McCaffrey; S. Park; S. Puthenthermadam; E. Runnion; J. Sanchez; J. Shields; K. Tsai; A. Tysdal; D. Wang; R. Williams; M. N. Kozicki; J. Wang; V. Gopinath; S. Hollmer; M. Van Buskirk

doi:10.1109/IEDM.2013.6724721

Conductive-bridge memory (CBRAM) with excellent high-temperature retention

J. R. Jameson, P. Blanchard, C. Cheng, J. Dinh, A. Gallo, V. Gopalakrishnan, C. Gopalan, B. Guichet, S. Hsu, D. Kamalanathan, D. Kim, F. Koushan, M. Kwan, K. Law, D. Lewis, Y. Ma, V. McCaffrey, S. Park, S. Puthenthermadam, E. RunnionJ. Sanchez, J. Shields, K. Tsai, A. Tysdal, D. Wang, R. Williams, M. N. Kozicki, J. Wang, V. Gopinath, S. Hollmer, M. Van Buskirk

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

44 Scopus citations

Abstract

High-temperature data retention is a critical hurdle for the commercialization of emerging nonvolatile memories. For Conductive-Bridge RAM (CBRAM) [1], we discuss high-temperature retention in terms of the physics of quantum point contacts, and we report on a family of CBRAM cells that achieve excellent retention at temperatures exceeding 200°C.

Original language	English (US)
Title of host publication	2013 IEEE International Electron Devices Meeting, IEDM 2013
Pages	30.1.1-30.1.4
DOIs	https://doi.org/10.1109/IEDM.2013.6724721
State	Published - 2013
Externally published	Yes
Event	2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States Duration: Dec 9 2013 → Dec 11 2013

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2013 IEEE International Electron Devices Meeting, IEDM 2013
Country/Territory	United States
City	Washington, DC
Period	12/9/13 → 12/11/13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1109/IEDM.2013.6724721

Cite this

Jameson, J. R., Blanchard, P., Cheng, C., Dinh, J., Gallo, A., Gopalakrishnan, V., Gopalan, C., Guichet, B., Hsu, S., Kamalanathan, D., Kim, D., Koushan, F., Kwan, M., Law, K., Lewis, D., Ma, Y., McCaffrey, V., Park, S., Puthenthermadam, S., ... Van Buskirk, M. (2013). Conductive-bridge memory (CBRAM) with excellent high-temperature retention. In 2013 IEEE International Electron Devices Meeting, IEDM 2013 (pp. 30.1.1-30.1.4). Article 6724721 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724721

Conductive-bridge memory (CBRAM) with excellent high-temperature retention. / Jameson, J. R.; Blanchard, P.; Cheng, C. et al.
2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. p. 30.1.1-30.1.4 6724721 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Jameson, JR, Blanchard, P, Cheng, C, Dinh, J, Gallo, A, Gopalakrishnan, V, Gopalan, C, Guichet, B, Hsu, S, Kamalanathan, D, Kim, D, Koushan, F, Kwan, M, Law, K, Lewis, D, Ma, Y, McCaffrey, V, Park, S, Puthenthermadam, S, Runnion, E, Sanchez, J, Shields, J, Tsai, K, Tysdal, A, Wang, D, Williams, R, Kozicki, MN, Wang, J, Gopinath, V, Hollmer, S & Van Buskirk, M 2013, Conductive-bridge memory (CBRAM) with excellent high-temperature retention. in 2013 IEEE International Electron Devices Meeting, IEDM 2013., 6724721, Technical Digest - International Electron Devices Meeting, IEDM, pp. 30.1.1-30.1.4, 2013 IEEE International Electron Devices Meeting, IEDM 2013, Washington, DC, United States, 12/9/13. https://doi.org/10.1109/IEDM.2013.6724721

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abstract = "High-temperature data retention is a critical hurdle for the commercialization of emerging nonvolatile memories. For Conductive-Bridge RAM (CBRAM) [1], we discuss high-temperature retention in terms of the physics of quantum point contacts, and we report on a family of CBRAM cells that achieve excellent retention at temperatures exceeding 200°C.",

author = "Jameson, {J. R.} and P. Blanchard and C. Cheng and J. Dinh and A. Gallo and V. Gopalakrishnan and C. Gopalan and B. Guichet and S. Hsu and D. Kamalanathan and D. Kim and F. Koushan and M. Kwan and K. Law and D. Lewis and Y. Ma and V. McCaffrey and S. Park and S. Puthenthermadam and E. Runnion and J. Sanchez and J. Shields and K. Tsai and A. Tysdal and D. Wang and R. Williams and Kozicki, {M. N.} and J. Wang and V. Gopinath and S. Hollmer and {Van Buskirk}, M.",

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AU - Gallo, A.

AU - Gopalakrishnan, V.

AU - Gopalan, C.

AU - Guichet, B.

AU - Hsu, S.

AU - Kamalanathan, D.

AU - Kim, D.

AU - Koushan, F.

AU - Kwan, M.

AU - Law, K.

AU - Lewis, D.

AU - Ma, Y.

AU - McCaffrey, V.

AU - Park, S.

AU - Puthenthermadam, S.

AU - Runnion, E.

AU - Sanchez, J.

AU - Shields, J.

AU - Tsai, K.

AU - Tysdal, A.

AU - Wang, D.

AU - Williams, R.

AU - Kozicki, M. N.

AU - Wang, J.

AU - Gopinath, V.

AU - Hollmer, S.

AU - Van Buskirk, M.

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AB - High-temperature data retention is a critical hurdle for the commercialization of emerging nonvolatile memories. For Conductive-Bridge RAM (CBRAM) [1], we discuss high-temperature retention in terms of the physics of quantum point contacts, and we report on a family of CBRAM cells that achieve excellent retention at temperatures exceeding 200°C.

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Y2 - 9 December 2013 through 11 December 2013

ER -

Conductive-bridge memory (CBRAM) with excellent high-temperature retention

Abstract

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Other

ASJC Scopus subject areas

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