Conductive-bridge memory (CBRAM) with excellent high-temperature retention

J. R. Jameson, P. Blanchard, C. Cheng, J. Dinh, A. Gallo, V. Gopalakrishnan, C. Gopalan, B. Guichet, S. Hsu, D. Kamalanathan, D. Kim, F. Koushan, M. Kwan, K. Law, D. Lewis, Y. Ma, V. McCaffrey, S. Park, S. Puthenthermadam, E. RunnionJ. Sanchez, J. Shields, K. Tsai, A. Tysdal, D. Wang, R. Williams, M. N. Kozicki, J. Wang, V. Gopinath, S. Hollmer, M. Van Buskirk

Research output: Chapter in Book/Report/Conference proceedingConference contribution

44 Scopus citations


High-temperature data retention is a critical hurdle for the commercialization of emerging nonvolatile memories. For Conductive-Bridge RAM (CBRAM) [1], we discuss high-temperature retention in terms of the physics of quantum point contacts, and we report on a family of CBRAM cells that achieve excellent retention at temperatures exceeding 200°C.

Original languageEnglish (US)
Title of host publication2013 IEEE International Electron Devices Meeting, IEDM 2013
StatePublished - 2013
Externally publishedYes
Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
Duration: Dec 9 2013Dec 11 2013

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


Other2013 IEEE International Electron Devices Meeting, IEDM 2013
Country/TerritoryUnited States
CityWashington, DC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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