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Concurrent events of memory and threshold switching in Ag/SiNx/Si devices
Sungjun Kim, Min Hwi Kim, Tae Hyeon Kim, Ying Chen Chen, Yao Feng Chang, Muhammad Ismail, Yoon Kim, Kyung Chang Ryoo, Byung Gook Park
Research output: Contribution to journal › Article › peer-review
5
Scopus
citations