Compositional dependence of Raman frequencies in ternary Ge1-x-y Six Sny alloys

V. R. D'Costa, J. Tolle, C. D. Poweleit, John Kouvetakis, Jose Menendez

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The Ge-Ge, Si-Si, and Si-Ge Raman frequencies in Ge1-x-y Six Sny alloys were measured for x≤0.2 and y≤0.1. The Ge-Ge and Si-Si mode frequencies are found to be linear functions of composition over the measured range. The coefficients obtained from linear fits to the experimental data are similar to those measured in binary alloys incorporating Si, Ge, or Sn, suggesting that the linear behavior extends over the entire range of possible compositions (x,y) to include the binary alloys as special cases. The linear coefficients are shown to follow a universal behavior that results from the scaling of phonon dispersion curves in Si, Ge, and α-Sn.

Original languageEnglish (US)
Article number035211
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number3
StatePublished - Jul 31 2007

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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