Composition and growth direction control of epitaxial vapor-liquid-solid- grown SiGe nanowires

Eric Dailey; Prashanth Madras; Jeffery Drucker

doi:10.1063/1.3497079

Composition and growth direction control of epitaxial vapor-liquid-solid- grown SiGe nanowires

Eric Dailey, Prashanth Madras, Jeffery Drucker

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The composition and growth direction of epitaxial SiGe alloy nanowires (NWs) grown via the Au-catalyzed vapor-liquid-solid technique can be controlled by varying growth conditions. These alloy NWs can adopt either Si-like or Ge-like characteristics. Si-like growth is characterized by Au-coated 〈 111 〉 -oriented NWs for low pressure growth and Au-free 〈 112 〉 -oriented NWs for higher pressure growth. Ge-like NWs always follow 〈 111 〉 and grow with Au-free sidewalls.

Original language	English (US)
Article number	143106
Journal	Applied Physics Letters
Volume	97
Issue number	14
DOIs	https://doi.org/10.1063/1.3497079
State	Published - Oct 4 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{d5414d5209534d29974b1c02af39f614,

title = "Composition and growth direction control of epitaxial vapor-liquid-solid- grown SiGe nanowires",

abstract = "The composition and growth direction of epitaxial SiGe alloy nanowires (NWs) grown via the Au-catalyzed vapor-liquid-solid technique can be controlled by varying growth conditions. These alloy NWs can adopt either Si-like or Ge-like characteristics. Si-like growth is characterized by Au-coated 〈 111 〉 -oriented NWs for low pressure growth and Au-free 〈 112 〉 -oriented NWs for higher pressure growth. Ge-like NWs always follow 〈 111 〉 and grow with Au-free sidewalls.",

author = "Eric Dailey and Prashanth Madras and Jeffery Drucker",

note = "Funding Information: This work was supported by the Department of Energy under Award No. DE-FG02-06ER46345. We thank P. A. Crozier for guidance with STEM and EDX.",

year = "2010",

month = oct,

day = "4",

doi = "10.1063/1.3497079",

language = "English (US)",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Composition and growth direction control of epitaxial vapor-liquid-solid- grown SiGe nanowires

AU - Dailey, Eric

AU - Madras, Prashanth

AU - Drucker, Jeffery

N1 - Funding Information: This work was supported by the Department of Energy under Award No. DE-FG02-06ER46345. We thank P. A. Crozier for guidance with STEM and EDX.

PY - 2010/10/4

Y1 - 2010/10/4

N2 - The composition and growth direction of epitaxial SiGe alloy nanowires (NWs) grown via the Au-catalyzed vapor-liquid-solid technique can be controlled by varying growth conditions. These alloy NWs can adopt either Si-like or Ge-like characteristics. Si-like growth is characterized by Au-coated 〈 111 〉 -oriented NWs for low pressure growth and Au-free 〈 112 〉 -oriented NWs for higher pressure growth. Ge-like NWs always follow 〈 111 〉 and grow with Au-free sidewalls.

AB - The composition and growth direction of epitaxial SiGe alloy nanowires (NWs) grown via the Au-catalyzed vapor-liquid-solid technique can be controlled by varying growth conditions. These alloy NWs can adopt either Si-like or Ge-like characteristics. Si-like growth is characterized by Au-coated 〈 111 〉 -oriented NWs for low pressure growth and Au-free 〈 112 〉 -oriented NWs for higher pressure growth. Ge-like NWs always follow 〈 111 〉 and grow with Au-free sidewalls.

UR - http://www.scopus.com/inward/record.url?scp=77958064145&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77958064145&partnerID=8YFLogxK

U2 - 10.1063/1.3497079

DO - 10.1063/1.3497079

M3 - Article

AN - SCOPUS:77958064145

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 143106

ER -

Composition and growth direction control of epitaxial vapor-liquid-solid- grown SiGe nanowires

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