Comparison of high voltage, vertical geometry Ga2O3 rectifiers with GaN and SiC

J. C. Yang; Chaker Fares; P. H. Carey; Minghan Man; Fan Ren; Marko Tadjer; Y. T. Chen; Yu Te Liao; Chin Wei Chang; Jenshan Lin; Ribhu Sharma; Mark E. Law; Peter E. Raad; Pavel L. Komarov; David J. Smith; Akito Kuramata; S. J. Pearton

doi:10.1149/09207.0015ecst

Comparison of high voltage, vertical geometry Ga₂O₃ rectifiers with GaN and SiC

J. C. Yang, Chaker Fares, P. H. Carey, Minghan Man, Fan Ren, Marko Tadjer, Y. T. Chen, Yu Te Liao, Chin Wei Chang, Jenshan Lin, Ribhu Sharma, Mark E. Law, Peter E. Raad, Pavel L. Komarov, David J. Smith, Akito Kuramata, S. J. Pearton

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Ga₂O₃ is a candidate for power electronics due to its large bandgap, controllable doping and availability of large diameter, inexpensive substrates. These include power conditioning systems, pulsed power for avionics and electric ships, solid-state drivers for heavy electric motors and advanced power management and control electronics. There are cases where the performance exceeds the theoretical values for SiC. Existing Si, SiC (vertical devices), and heteroepitaxial GaN (lateral devices) enjoy advantages in terms of process maturity, especially for Si, where devices such as superjunctions which surpass the unipolar "limit". Continued development of low defect substrates, optimized epi growth and device design and processing methods for Ga₂O₃ are required to push the experimental results closer to their theoretical values. The actual experimental value of Vb is well below the theoretical predictions. Thermal management is a key issue in Ga₂O₃ devices and initial studies have appeared on both the experimental and theoretical fronts.

Original language	English (US)
Title of host publication	Gallium Nitride and Silicon Carbide Power Technologies 9
Editors	M. Dudley, B. Raghothamachar, N. Ohtani, M. Bakowski, K. Shenai
Publisher	Electrochemical Society Inc.
Pages	15-24
Number of pages	10
Edition	7
ISBN (Electronic)	9781607688815
ISBN (Print)	9781607688815
DOIs	https://doi.org/10.1149/09207.0015ecst
State	Published - 2019
Event	Symposium on Gallium Nitride and Silicon Carbide Power Technologies 9 - 236th ECS Meeting - Atlanta, United States Duration: Oct 13 2019 → Oct 17 2019

Publication series

Name	ECS Transactions
Number	7
Volume	92
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Gallium Nitride and Silicon Carbide Power Technologies 9 - 236th ECS Meeting
Country/Territory	United States
City	Atlanta
Period	10/13/19 → 10/17/19

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/09207.0015ecst

Cite this

Yang, J. C., Fares, C., Carey, P. H., Man, M., Ren, F., Tadjer, M., Chen, Y. T., Liao, Y. T., Chang, C. W., Lin, J., Sharma, R., Law, M. E., Raad, P. E., Komarov, P. L., Smith, D. J., Kuramata, A., & Pearton, S. J. (2019). Comparison of high voltage, vertical geometry Ga₂O₃ rectifiers with GaN and SiC. In M. Dudley, B. Raghothamachar, N. Ohtani, M. Bakowski, & K. Shenai (Eds.), Gallium Nitride and Silicon Carbide Power Technologies 9 (7 ed., pp. 15-24). (ECS Transactions; Vol. 92, No. 7). Electrochemical Society Inc.. https://doi.org/10.1149/09207.0015ecst

Comparison of high voltage, vertical geometry Ga₂O₃ rectifiers with GaN and SiC. / Yang, J. C.; Fares, Chaker; Carey, P. H. et al.
Gallium Nitride and Silicon Carbide Power Technologies 9. ed. / M. Dudley; B. Raghothamachar; N. Ohtani; M. Bakowski; K. Shenai. 7. ed. Electrochemical Society Inc., 2019. p. 15-24 (ECS Transactions; Vol. 92, No. 7).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yang, JC, Fares, C, Carey, PH, Man, M, Ren, F, Tadjer, M, Chen, YT, Liao, YT, Chang, CW, Lin, J, Sharma, R, Law, ME, Raad, PE, Komarov, PL, Smith, DJ, Kuramata, A & Pearton, SJ 2019, Comparison of high voltage, vertical geometry Ga₂O₃ rectifiers with GaN and SiC. in M Dudley, B Raghothamachar, N Ohtani, M Bakowski & K Shenai (eds), Gallium Nitride and Silicon Carbide Power Technologies 9. 7 edn, ECS Transactions, no. 7, vol. 92, Electrochemical Society Inc., pp. 15-24, Symposium on Gallium Nitride and Silicon Carbide Power Technologies 9 - 236th ECS Meeting, Atlanta, United States, 10/13/19. https://doi.org/10.1149/09207.0015ecst

Yang JC, Fares C, Carey PH, Man M, Ren F, Tadjer M et al. Comparison of high voltage, vertical geometry Ga₂O₃ rectifiers with GaN and SiC. In Dudley M, Raghothamachar B, Ohtani N, Bakowski M, Shenai K, editors, Gallium Nitride and Silicon Carbide Power Technologies 9. 7 ed. Electrochemical Society Inc. 2019. p. 15-24. (ECS Transactions; 7). doi: 10.1149/09207.0015ecst

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