Comparative study of the thermoelectric properties of amorphous Zn 41Sb 59 and crystalline Zn 4Sb 3

Yang Wu; Johanna Nylén; Craig Naseyowma; Nathan Newman; J. Garcia Garcia Francisco; Ulrich Häussermann

doi:10.1021/cm802893v

Comparative study of the thermoelectric properties of amorphous Zn ₄₁Sb ₅₉ and crystalline Zn ₄Sb ₃

Yang Wu, Johanna Nylén, Craig Naseyowma, Nathan Newman, J. Garcia Garcia Francisco, Ulrich Häussermann

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Abstract

The alloy Zn ₄₁Sb ₅₉ was synthesized by high-pressure techniques and its bulk amorphous nature at ambient conditions confirmed by X-ray powder diffraction and electron microscopy studies. Electrical resistivity, thermopower, and thermal conductivity of Zn ₄₁Sb ₅₉ were measured in a temperature range from 6 to 350 K. Zn ₄₁Sb ₅₉ is a semiconductor and resistivity data suggest an activation energy of about 0.25 eV above 250 K. The thermopower is positive and increases with increasing temperature. Room-temperature values for the resistivity and thermopower are 8 Ω cm and 300 μV/K, respectively. The temperature dependence of the thermal conductivity is characteristic for amorphous solids and continuously increasing from 0.08 W/(m K) at 6 K to 0.19 W/(m K) at room temperature. Comparison of the thermal conductivity of Zn ₄₁Sb ₅₉ with the thermal lattice conductivity of the crystalline thermoelectric material β-Zn ₄Sb ₃ reveals a remarkable resemblance, justifying the classification of the latter as a phonon-glass material.

Original language	English (US)
Pages (from-to)	151-155
Number of pages	5
Journal	Chemistry of Materials
Volume	21
Issue number	1
DOIs	https://doi.org/10.1021/cm802893v
State	Published - Jan 13 2009

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)
Materials Chemistry

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title = "Comparative study of the thermoelectric properties of amorphous Zn 41Sb 59 and crystalline Zn 4Sb 3 ",

abstract = "The alloy Zn 41Sb 59 was synthesized by high-pressure techniques and its bulk amorphous nature at ambient conditions confirmed by X-ray powder diffraction and electron microscopy studies. Electrical resistivity, thermopower, and thermal conductivity of Zn 41Sb 59 were measured in a temperature range from 6 to 350 K. Zn 41Sb 59 is a semiconductor and resistivity data suggest an activation energy of about 0.25 eV above 250 K. The thermopower is positive and increases with increasing temperature. Room-temperature values for the resistivity and thermopower are 8 Ω cm and 300 μV/K, respectively. The temperature dependence of the thermal conductivity is characteristic for amorphous solids and continuously increasing from 0.08 W/(m K) at 6 K to 0.19 W/(m K) at room temperature. Comparison of the thermal conductivity of Zn 41Sb 59 with the thermal lattice conductivity of the crystalline thermoelectric material β-Zn 4Sb 3 reveals a remarkable resemblance, justifying the classification of the latter as a phonon-glass material.",

author = "Yang Wu and Johanna Nyl{\'e}n and Craig Naseyowma and Nathan Newman and Francisco, {J. Garcia Garcia} and Ulrich H{\"a}ussermann",

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T1 - Comparative study of the thermoelectric properties of amorphous Zn 41Sb 59 and crystalline Zn 4Sb 3

AU - Wu, Yang

AU - Nylén, Johanna

AU - Naseyowma, Craig

AU - Newman, Nathan

AU - Francisco, J. Garcia Garcia

AU - Häussermann, Ulrich

PY - 2009/1/13

Y1 - 2009/1/13

N2 - The alloy Zn 41Sb 59 was synthesized by high-pressure techniques and its bulk amorphous nature at ambient conditions confirmed by X-ray powder diffraction and electron microscopy studies. Electrical resistivity, thermopower, and thermal conductivity of Zn 41Sb 59 were measured in a temperature range from 6 to 350 K. Zn 41Sb 59 is a semiconductor and resistivity data suggest an activation energy of about 0.25 eV above 250 K. The thermopower is positive and increases with increasing temperature. Room-temperature values for the resistivity and thermopower are 8 Ω cm and 300 μV/K, respectively. The temperature dependence of the thermal conductivity is characteristic for amorphous solids and continuously increasing from 0.08 W/(m K) at 6 K to 0.19 W/(m K) at room temperature. Comparison of the thermal conductivity of Zn 41Sb 59 with the thermal lattice conductivity of the crystalline thermoelectric material β-Zn 4Sb 3 reveals a remarkable resemblance, justifying the classification of the latter as a phonon-glass material.

AB - The alloy Zn 41Sb 59 was synthesized by high-pressure techniques and its bulk amorphous nature at ambient conditions confirmed by X-ray powder diffraction and electron microscopy studies. Electrical resistivity, thermopower, and thermal conductivity of Zn 41Sb 59 were measured in a temperature range from 6 to 350 K. Zn 41Sb 59 is a semiconductor and resistivity data suggest an activation energy of about 0.25 eV above 250 K. The thermopower is positive and increases with increasing temperature. Room-temperature values for the resistivity and thermopower are 8 Ω cm and 300 μV/K, respectively. The temperature dependence of the thermal conductivity is characteristic for amorphous solids and continuously increasing from 0.08 W/(m K) at 6 K to 0.19 W/(m K) at room temperature. Comparison of the thermal conductivity of Zn 41Sb 59 with the thermal lattice conductivity of the crystalline thermoelectric material β-Zn 4Sb 3 reveals a remarkable resemblance, justifying the classification of the latter as a phonon-glass material.

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Comparative study of the thermoelectric properties of amorphous Zn ₄₁Sb ₅₉ and crystalline Zn ₄Sb ₃

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