Comparative fluctuation microscopy study of medium-range order in hydrogenated amorphous silicon deposited by various methods

P. M. Voyles; Michael Treacy; H. C. Jin; J. R. Abelson; J. M. Gibson; J. Yang; S. Guha; R. S. Crandall

Comparative fluctuation microscopy study of medium-range order in hydrogenated amorphous silicon deposited by various methods

P. M. Voyles
, Michael Treacy
, H. C. Jin
, J. R. Abelson
, J. M. Gibson
, J. Yang
, S. Guha
, R. S. Crandall

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have characterized by fluctuation electron microscopy the medium-range order of hydrogenated amorphous silicon thin films deposited by a variety of methods. Films were deposited by reactive magnetron sputtering, hot-wire chemical vapor deposition, and plasma enhanced chemical vapor deposition with and without H ₂ dilution of the SiH ₄ precursor gas. All of the films show the signature of the paracrystalline structure typical of amorphous Si. There are small variations in the degree of medium-range order with deposition method and H content. The PECVD film grown with high H ₂ dilution contains Si crystals ∼5 nm in diameter at a density of ∼10 ⁹ cm ^-2. The amorphous matrix surrounding these crystals shows no difference in medium-range order from the standard PECVD film. This supports explanations of the resistance of the H-dilution material to light-induced degradation that depend only on the presence of crystalline grains without modifications of the amorphous matrix.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	R.W. Collins, H.M. Branz, M. Stutzmann, S. Guha, H. Okamoto
Volume	609
State	Published - 2000
Externally published	Yes
Event	Amorphous and Heterogeneus Silicon Thin Films-2000 - San Francisco, CA, United States Duration: Apr 24 2000 → Apr 28 2000

Other

Other	Amorphous and Heterogeneus Silicon Thin Films-2000
Country/Territory	United States
City	San Francisco, CA
Period	4/24/00 → 4/28/00

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Voyles, P. M., Treacy, M., Jin, H. C., Abelson, J. R., Gibson, J. M., Yang, J., Guha, S., & Crandall, R. S. (2000). Comparative fluctuation microscopy study of medium-range order in hydrogenated amorphous silicon deposited by various methods. In R. W. Collins, H. M. Branz, M. Stutzmann, S. Guha, & H. Okamoto (Eds.), Materials Research Society Symposium - Proceedings (Vol. 609)

Comparative fluctuation microscopy study of medium-range order in hydrogenated amorphous silicon deposited by various methods. / Voyles, P. M.; Treacy, Michael; Jin, H. C. et al.
Materials Research Society Symposium - Proceedings. ed. / R.W. Collins; H.M. Branz; M. Stutzmann; S. Guha; H. Okamoto. Vol. 609 2000.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Voyles, PM, Treacy, M, Jin, HC, Abelson, JR, Gibson, JM, Yang, J, Guha, S & Crandall, RS 2000, Comparative fluctuation microscopy study of medium-range order in hydrogenated amorphous silicon deposited by various methods. in RW Collins, HM Branz, M Stutzmann, S Guha & H Okamoto (eds), Materials Research Society Symposium - Proceedings. vol. 609, Amorphous and Heterogeneus Silicon Thin Films-2000, San Francisco, CA, United States, 4/24/00.

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title = "Comparative fluctuation microscopy study of medium-range order in hydrogenated amorphous silicon deposited by various methods",

abstract = "We have characterized by fluctuation electron microscopy the medium-range order of hydrogenated amorphous silicon thin films deposited by a variety of methods. Films were deposited by reactive magnetron sputtering, hot-wire chemical vapor deposition, and plasma enhanced chemical vapor deposition with and without H 2 dilution of the SiH 4 precursor gas. All of the films show the signature of the paracrystalline structure typical of amorphous Si. There are small variations in the degree of medium-range order with deposition method and H content. The PECVD film grown with high H 2 dilution contains Si crystals ∼5 nm in diameter at a density of ∼10 9 cm -2. The amorphous matrix surrounding these crystals shows no difference in medium-range order from the standard PECVD film. This supports explanations of the resistance of the H-dilution material to light-induced degradation that depend only on the presence of crystalline grains without modifications of the amorphous matrix. ",

author = "Voyles, \{P. M.\} and Michael Treacy and Jin, \{H. C.\} and Abelson, \{J. R.\} and Gibson, \{J. M.\} and J. Yang and S. Guha and Crandall, \{R. S.\}",

year = "2000",

language = "English (US)",

volume = "609",

editor = "R.W. Collins and H.M. Branz and M. Stutzmann and S. Guha and H. Okamoto",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "Amorphous and Heterogeneus Silicon Thin Films-2000 ; Conference date: 24-04-2000 Through 28-04-2000",

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T1 - Comparative fluctuation microscopy study of medium-range order in hydrogenated amorphous silicon deposited by various methods

AU - Voyles, P. M.

AU - Treacy, Michael

AU - Jin, H. C.

AU - Abelson, J. R.

AU - Gibson, J. M.

AU - Yang, J.

AU - Guha, S.

AU - Crandall, R. S.

PY - 2000

Y1 - 2000

N2 - We have characterized by fluctuation electron microscopy the medium-range order of hydrogenated amorphous silicon thin films deposited by a variety of methods. Films were deposited by reactive magnetron sputtering, hot-wire chemical vapor deposition, and plasma enhanced chemical vapor deposition with and without H 2 dilution of the SiH 4 precursor gas. All of the films show the signature of the paracrystalline structure typical of amorphous Si. There are small variations in the degree of medium-range order with deposition method and H content. The PECVD film grown with high H 2 dilution contains Si crystals ∼5 nm in diameter at a density of ∼10 9 cm -2. The amorphous matrix surrounding these crystals shows no difference in medium-range order from the standard PECVD film. This supports explanations of the resistance of the H-dilution material to light-induced degradation that depend only on the presence of crystalline grains without modifications of the amorphous matrix.

AB - We have characterized by fluctuation electron microscopy the medium-range order of hydrogenated amorphous silicon thin films deposited by a variety of methods. Films were deposited by reactive magnetron sputtering, hot-wire chemical vapor deposition, and plasma enhanced chemical vapor deposition with and without H 2 dilution of the SiH 4 precursor gas. All of the films show the signature of the paracrystalline structure typical of amorphous Si. There are small variations in the degree of medium-range order with deposition method and H content. The PECVD film grown with high H 2 dilution contains Si crystals ∼5 nm in diameter at a density of ∼10 9 cm -2. The amorphous matrix surrounding these crystals shows no difference in medium-range order from the standard PECVD film. This supports explanations of the resistance of the H-dilution material to light-induced degradation that depend only on the presence of crystalline grains without modifications of the amorphous matrix.

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M3 - Conference contribution

AN - SCOPUS:0034429905

VL - 609

BT - Materials Research Society Symposium - Proceedings

A2 - Collins, R.W.

A2 - Branz, H.M.

A2 - Stutzmann, M.

A2 - Guha, S.

A2 - Okamoto, H.

T2 - Amorphous and Heterogeneus Silicon Thin Films-2000

Y2 - 24 April 2000 through 28 April 2000

ER -

Comparative fluctuation microscopy study of medium-range order in hydrogenated amorphous silicon deposited by various methods

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