TY - GEN
T1 - Compact modeling of Fe-FET and implications on variation-insensitive design
AU - Wang, Chi Chao
AU - Ye, Yun
AU - Cao, Yu
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - Semiconductor devices with self-feedback mechanisms are considered as a promising alternative to traditional CMOS, in order to achieve faster operation and lower switching energy. Examples include IMOS and FBFET that are operated in a non-equilibrium condition to rapidly generate mobile carriers [1-2]. More recently, Fe-FET was proposed to improve the switching by integrating a ferroelectric material as gate insulator in a MOSFET structure [3-5]. Under particular circumstance, ferroelectric capacitance is effectively negative, due to the negative slope of its polarization-electrical field (P-E) curve. This property makes the ferroelectric layer a voltage amplifier to boost surface potential, achieving fast transition. In this paper: (1) A new threshold voltage model is developed to capture the feedback of negative capacitance and IV characteristics of Fe-FET; (2) It is further revealed that the impact of random dopant fluctuation (RDF) on leakage variability can be significantly suppressed in Fe-FET, by tuning the thickness of the ferroelectric layer.
AB - Semiconductor devices with self-feedback mechanisms are considered as a promising alternative to traditional CMOS, in order to achieve faster operation and lower switching energy. Examples include IMOS and FBFET that are operated in a non-equilibrium condition to rapidly generate mobile carriers [1-2]. More recently, Fe-FET was proposed to improve the switching by integrating a ferroelectric material as gate insulator in a MOSFET structure [3-5]. Under particular circumstance, ferroelectric capacitance is effectively negative, due to the negative slope of its polarization-electrical field (P-E) curve. This property makes the ferroelectric layer a voltage amplifier to boost surface potential, achieving fast transition. In this paper: (1) A new threshold voltage model is developed to capture the feedback of negative capacitance and IV characteristics of Fe-FET; (2) It is further revealed that the impact of random dopant fluctuation (RDF) on leakage variability can be significantly suppressed in Fe-FET, by tuning the thickness of the ferroelectric layer.
KW - Compact modeling
KW - Fe-FET
KW - Random dopant fluctuation (RDF)
KW - Steep subthreshold slope
KW - Variation-insensitive
UR - http://www.scopus.com/inward/record.url?scp=78649549039&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78649549039&partnerID=8YFLogxK
U2 - 10.1109/SISPAD.2010.5604516
DO - 10.1109/SISPAD.2010.5604516
M3 - Conference contribution
AN - SCOPUS:78649549039
SN - 9781424476992
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 247
EP - 250
BT - 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
T2 - 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
Y2 - 6 September 2010 through 8 September 2010
ER -