Abstract
We present a rigorous surface-potential-based compact model of independent-gate asymmetric FinFETs enabled by solving several long-standing theoretical problems. The model is verified with TCAD simulations and is implemented in a standard circuit simulator. Simulation examples for both digital and analog circuits verify good model convergence and demonstrate the capabilities of new circuit topologies that can be implemented using independent-gate asymmetric FinFETs.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 103-107 |
| Number of pages | 5 |
| Journal | Journal of Computational Electronics |
| Volume | 8 |
| Issue number | 3-4 |
| State | Published - Dec 1 2009 |
Keywords
- Compact model
- Independent-gate FinFET
- Surface potential
- Symmetric linearization
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Modeling and Simulation
- Electrical and Electronic Engineering