Cobalt silicide formation on 6H silicon carbide

A. O. Porto; B. I. Boyanov; D. E. Sayers; R. J. Nemanich

doi:10.1107/S0909049599001326

Cobalt silicide formation on 6H silicon carbide

A. O. Porto, B. I. Boyanov, D. E. Sayers, R. J. Nemanich

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Cobalt films (1, 25 and 100 Å) have been directly deposited on top 6H-SiC(0001) wafers by molecular beam epitaxy and annealed at 500-800⁰C in UHV. The structure of the metal-semiconductor interface was investigated by XAFS. The results show that Co-Si bonds were preferentially formed in the 1 Å Co films. In the 25 and 100 Å Co films only Co-Co bonds were identified. The XRD pattern of the 100 Å Co film exhibits a Co (200) peak confirming the presence of unreacted metal even after annealing at 800⁰C.

Original language	English (US)
Pages (from-to)	188-189
Number of pages	2
Journal	Journal of synchrotron radiation
Volume	6
Issue number	3
DOIs	https://doi.org/10.1107/S0909049599001326
State	Published - May 1 1999
Externally published	Yes

Keywords

Metal-semiconductor contacts
Molecular beam epitaxy
Silicon Carbide

ASJC Scopus subject areas

Radiation
Nuclear and High Energy Physics
Instrumentation

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10.1107/S0909049599001326

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title = "Cobalt silicide formation on 6H silicon carbide",

abstract = "Cobalt films (1, 25 and 100 {\AA}) have been directly deposited on top 6H-SiC(0001) wafers by molecular beam epitaxy and annealed at 500-8000C in UHV. The structure of the metal-semiconductor interface was investigated by XAFS. The results show that Co-Si bonds were preferentially formed in the 1 {\AA} Co films. In the 25 and 100 {\AA} Co films only Co-Co bonds were identified. The XRD pattern of the 100 {\AA} Co film exhibits a Co (200) peak confirming the presence of unreacted metal even after annealing at 8000C.",

keywords = "Metal-semiconductor contacts, Molecular beam epitaxy, Silicon Carbide",

author = "Porto, {A. O.} and Boyanov, {B. I.} and Sayers, {D. E.} and Nemanich, {R. J.}",

year = "1999",

month = may,

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doi = "10.1107/S0909049599001326",

language = "English (US)",

volume = "6",

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journal = "Journal of synchrotron radiation",

issn = "0909-0495",

publisher = "International Union of Crystallography",

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TY - JOUR

T1 - Cobalt silicide formation on 6H silicon carbide

AU - Porto, A. O.

AU - Boyanov, B. I.

AU - Sayers, D. E.

AU - Nemanich, R. J.

PY - 1999/5/1

Y1 - 1999/5/1

N2 - Cobalt films (1, 25 and 100 Å) have been directly deposited on top 6H-SiC(0001) wafers by molecular beam epitaxy and annealed at 500-8000C in UHV. The structure of the metal-semiconductor interface was investigated by XAFS. The results show that Co-Si bonds were preferentially formed in the 1 Å Co films. In the 25 and 100 Å Co films only Co-Co bonds were identified. The XRD pattern of the 100 Å Co film exhibits a Co (200) peak confirming the presence of unreacted metal even after annealing at 8000C.

AB - Cobalt films (1, 25 and 100 Å) have been directly deposited on top 6H-SiC(0001) wafers by molecular beam epitaxy and annealed at 500-8000C in UHV. The structure of the metal-semiconductor interface was investigated by XAFS. The results show that Co-Si bonds were preferentially formed in the 1 Å Co films. In the 25 and 100 Å Co films only Co-Co bonds were identified. The XRD pattern of the 100 Å Co film exhibits a Co (200) peak confirming the presence of unreacted metal even after annealing at 8000C.

KW - Metal-semiconductor contacts

KW - Molecular beam epitaxy

KW - Silicon Carbide

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EP - 189

JO - Journal of synchrotron radiation

JF - Journal of synchrotron radiation

IS - 3

ER -

Cobalt silicide formation on 6H silicon carbide

Abstract

Keywords

ASJC Scopus subject areas

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