Cobalt silicide formation on 6H silicon carbide

A. O. Porto, B. I. Boyanov, D. E. Sayers, R. J. Nemanich

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Cobalt films (1, 25 and 100 Å) have been directly deposited on top 6H-SiC(0001) wafers by molecular beam epitaxy and annealed at 500-8000C in UHV. The structure of the metal-semiconductor interface was investigated by XAFS. The results show that Co-Si bonds were preferentially formed in the 1 Å Co films. In the 25 and 100 Å Co films only Co-Co bonds were identified. The XRD pattern of the 100 Å Co film exhibits a Co (200) peak confirming the presence of unreacted metal even after annealing at 8000C.

Original languageEnglish (US)
Pages (from-to)188-189
Number of pages2
JournalJournal of synchrotron radiation
Issue number3
StatePublished - May 1 1999
Externally publishedYes


  • Metal-semiconductor contacts
  • Molecular beam epitaxy
  • Silicon Carbide

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Instrumentation


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