Chemical vapor deposition of heteroepitaxial Si1-x-yGe xCy films on (100)Si substrates

Z. Atzmon, A. E. Bair, E. J. Jaquez, J. W. Mayer, D. Chandrasekhar, David Smith, Richard Hervig, McD Robinson

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74 Scopus citations


Thin heteroepitaxial films of Si1-x-yGexCy have been grown on (100)Si substrates using atmospheric pressure chemical vapor deposition at 625°C. The crystallinity, composition, and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry, secondary-ion-mass spectrometry, and cross-sectional transmission electron microscopy. The crystallinity of the films was very sensitive to the flow rate of C2H4 which served as the C source. Films with up to 2% C were epitaxial with good crystallinity and very few interfacial defects. Between 800 and 900 sccm of 10% C2H4 in He, the C content increased dramatically from 2% to 10% and the as-grown films changed from crystalline to amorphous. In order to establish deposition conditions for the crystalline-amorphous phase transformation, one SiGeC film was deposited as the 10% C2H4 flow was increased linearly from 500 to 1500 sccm during growth. When the C content reached ∼4%, the film developed considerable stacking defects and disorder, and at around 11% C, the film became amorphous.

Original languageEnglish (US)
Pages (from-to)2559-2561
Number of pages3
JournalApplied Physics Letters
Issue number20
StatePublished - 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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