Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy

Keyphrases

• InAlN 100%
• Charge Control 100%
• Plasma-assisted Molecular Beam Epitaxy 100%
• Nitrogen-polar (N-polar) 100%
• High Electron Mobility Transistor 100%
• Aluminum Gallium Nitride (AlGaN) 40%
• Sheet Resistance 20%
• Carrier Density 20%
• Design Space 20%
• Power Performance 20%
• Breakdown Voltage 20%
• Capping Layer 20%
• Minimal Impact 20%
• High Frequency Devices 20%
• Barrier Thickness 20%
• Pt-based 20%
• Freestanding GaN Substrate 20%
• Drain Current Density 20%
• Schottky Gate 20%
• Drain Spacing 20%
• Ga-polar 20%
• Access Resistance 20%
• Frequency Performance 20%
• Source/drain 20%
• Epitaxial Design 20%

Material Science

• Molecular Beam Epitaxy 100%
• Transistor 100%
• Electron Mobility 100%
• Density 20%
• Carrier Concentration 20%
• Aluminum Nitride 20%

Engineering

• Transistor 100%
• Sheet Resistance 20%
• Design Space 20%
• Interlayer 20%
• Breakdown Voltage 20%
• Cap Layer 20%
• Current Drain 20%
• Drain Spacing 20%
• Carrier Concentration 20%