TY - GEN
T1 - Characterization of SiO2/Al2O3stack passivation with n- And p-type poly-Si layers
AU - Kim, Sangpyeong
AU - Augusto, Andre
AU - Bowden, Stuart
AU - Honsberg, Christiana B.
N1 - Funding Information:
The authors thank the staff in SPL (Solar Power Lab), especially, Bill Dauksher, and NanoFab at Arizona State University.
Funding Information:
ACKNOWLEDGMENT The authors thank the staff in SPL (Solar Power Lab), especially, Bill Dauksher, and NanoFab at Arizona State University. This work was supported by NSF (National Science Foundation) and DOE (Department of Energy) under QESST (Quantum Energy and Sustainable Solar Technologies) grant EEC-1041895.
Funding Information:
NSF (National Science Foundation) and DOE (Department of Energy) under QESST (Quantum Energy and Sustainable Solar Technologies)
Publisher Copyright:
© 2021 IEEE.
PY - 2021/6/20
Y1 - 2021/6/20
N2 - In this manuscript, we characterized SiO2/Al2O3 (1nm/0.8nm) layers stacked with n-type polysilicon or p-type polysilicon. This study explores the surface passivation capabilities of these structures. In this work, we also optimized the rapid thermal annealing (RTA) in forming gas (N2/H2) environment. Using a very thin Al2O3 (<1nm) we accomplished effective lifetimes <100 μs. By adding a thin SiO2 (1nm) layer prior to the Al2O3 deposition, we improved the effective lifetime >500 μs. The SiO2 layer enhances the chemical and field effect passivation by increasing hydrogen contents and negative fixed charge effect of the Al2O3. To increase further the effective lifetime, we added doped a-Si:H layers on top of the SiO2/Al2O3. The doped a-Si:H layers are responsible to hydrogenate the stack. After depositing the n-a-Si:H, the effective lifetime was improved from 100μs to 1ms. After RTA the effective lifetime was increased to 4ms. When we deposited the p-a-Si:H, the effective lifetime was degraded from 60μs to 10μs. After RTA the effective lifetime didn't change significantly.
AB - In this manuscript, we characterized SiO2/Al2O3 (1nm/0.8nm) layers stacked with n-type polysilicon or p-type polysilicon. This study explores the surface passivation capabilities of these structures. In this work, we also optimized the rapid thermal annealing (RTA) in forming gas (N2/H2) environment. Using a very thin Al2O3 (<1nm) we accomplished effective lifetimes <100 μs. By adding a thin SiO2 (1nm) layer prior to the Al2O3 deposition, we improved the effective lifetime >500 μs. The SiO2 layer enhances the chemical and field effect passivation by increasing hydrogen contents and negative fixed charge effect of the Al2O3. To increase further the effective lifetime, we added doped a-Si:H layers on top of the SiO2/Al2O3. The doped a-Si:H layers are responsible to hydrogenate the stack. After depositing the n-a-Si:H, the effective lifetime was improved from 100μs to 1ms. After RTA the effective lifetime was increased to 4ms. When we deposited the p-a-Si:H, the effective lifetime was degraded from 60μs to 10μs. After RTA the effective lifetime didn't change significantly.
KW - Rapid thermal annealing
KW - SiO/AlOpassivation
KW - Stack passivation
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U2 - 10.1109/PVSC43889.2021.9519087
DO - 10.1109/PVSC43889.2021.9519087
M3 - Conference contribution
AN - SCOPUS:85115981223
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1712
EP - 1715
BT - 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Y2 - 20 June 2021 through 25 June 2021
ER -