Abstract
We report on the OMVPE growth and characterization of AlGaInN and its heterostructures, including measurements of electrical properties (Hall), optical properties (photo- and cathodo-luminescence), structural characteristics (x-ray diffraction and TEM); and also the emission of InGaN/AlGaN heterostructures subject to optical and electrical pumping.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Editors | F.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar |
Publisher | Materials Research Society |
Pages | 509-518 |
Number of pages | 10 |
Volume | 449 |
State | Published - 1997 |
Externally published | Yes |
Event | Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996 |
Other
Other | Proceedings of the 1996 MRS Fall Symposium |
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City | Boston, MA, USA |
Period | 12/2/96 → 12/6/96 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials