Characterization of OMVPE-grown AlGaInP heterostructures

D. P. Bour, H. F. Chung, W. Gotz, L. Romano, B. S. Krusor, D. Hofstetter, S. Rudaz, C. P. Kuo, Fernando Ponce, N. M. Johnson, M. G. Craford, R. D. Bringans

Research output: Chapter in Book/Report/Conference proceedingConference contribution

30 Scopus citations

Abstract

We report on the OMVPE growth and characterization of AlGaInN and its heterostructures, including measurements of electrical properties (Hall), optical properties (photo- and cathodo-luminescence), structural characteristics (x-ray diffraction and TEM); and also the emission of InGaN/AlGaN heterostructures subject to optical and electrical pumping.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsF.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar
PublisherMaterials Research Society
Pages509-518
Number of pages10
Volume449
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

Other

OtherProceedings of the 1996 MRS Fall Symposium
CityBoston, MA, USA
Period12/2/9612/6/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint

Dive into the research topics of 'Characterization of OMVPE-grown AlGaInP heterostructures'. Together they form a unique fingerprint.

Cite this