Abstract
In this study, the electron affinity and Schottky barrier height of thin Cu and Zr films on diamond (100) substrates were correlated by means of UV photoemission spectroscopy (UPS) measurements. Prior to metal deposition the diamond crystals were cleaned by a 1150°C or 500°C anneal in UHV, and the surfaces were characterized by AES and AFM, This resulted in surfaces terminated with oxygen or free of chemisorbed species. By means of UPS it was found that whether a metal did induce a negative electron affinity (NEA) on a diamond surface was dependent on the surface preparation before metal deposition and on the metal work function. In particular, the Schottky barrier height for clean surfaces was lower than for surfaces terminated by oxygen. Metal-diamond interfaces exhibiting a NEA had a lower Schottky barrier height than those exhibiting a positive electron affinity. These effects were attributed to different interfacial layers. Field emission measurements were performed before and after metal deposition. For all cases a reduction in the threshold electric field was observed upon metal overgrowth.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 398-402 |
| Number of pages | 5 |
| Journal | Diamond and Related Materials |
| Volume | 6 |
| Issue number | 2-4 |
| DOIs | |
| State | Published - Mar 1997 |
| Externally published | Yes |
Keywords
- Electron affinity
- Metal-diamond interfaces
- Schottky barrier height
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- General Chemistry
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering