Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica

T. Ray; H. Zhu; I. S. Elango; Deirdre Meldrum

doi:10.1109/MEMSYS.2011.5734399

Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica

T. Ray, H. Zhu, I. S. Elango, Deirdre Meldrum

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

In this paper we report our results from the process development and characterization of KMPR®1025 as a complimentary met al-oxide semiconductor (CMOS) process compatible masking layer for the deep reactive ion etching (RIE) of fused silica. The processing conditions and the etch resistivity of KMPR®1025 as a function of different parameters like pressure, gaseous composition, gas flow rate and hard-bake conditions are examined in details in this study.

Original language	English (US)
Title of host publication	2011 IEEE 24th International Conference on Micro Electro Mechanical Systems, MEMS 2011
Pages	213-216
Number of pages	4
DOIs	https://doi.org/10.1109/MEMSYS.2011.5734399
State	Published - Apr 13 2011
Event	24th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2011 - Cancun, Mexico Duration: Jan 23 2011 → Jan 27 2011

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)	1084-6999

Other

Other	24th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2011
Country/Territory	Mexico
City	Cancun
Period	1/23/11 → 1/27/11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/MEMSYS.2011.5734399

Cite this

Ray, T., Zhu, H., Elango, I. S., & Meldrum, D. (2011). Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica. In 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems, MEMS 2011 (pp. 213-216). Article 5734399 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). https://doi.org/10.1109/MEMSYS.2011.5734399

Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica. / Ray, T.; Zhu, H.; Elango, I. S. et al.
2011 IEEE 24th International Conference on Micro Electro Mechanical Systems, MEMS 2011. 2011. p. 213-216 5734399 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ray, T, Zhu, H, Elango, IS & Meldrum, D 2011, Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica. in 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems, MEMS 2011., 5734399, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), pp. 213-216, 24th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2011, Cancun, Mexico, 1/23/11. https://doi.org/10.1109/MEMSYS.2011.5734399

Ray T, Zhu H, Elango IS, Meldrum D. Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica. In 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems, MEMS 2011. 2011. p. 213-216. 5734399. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). doi: 10.1109/MEMSYS.2011.5734399

@inproceedings{1b40ab3307c74305b655b206cfefb744,

title = "Characterization of KMPR{\textregistered}1025 as a masking layer for deep reactive ion etching of fused silica",

abstract = "In this paper we report our results from the process development and characterization of KMPR{\textregistered}1025 as a complimentary met al-oxide semiconductor (CMOS) process compatible masking layer for the deep reactive ion etching (RIE) of fused silica. The processing conditions and the etch resistivity of KMPR{\textregistered}1025 as a function of different parameters like pressure, gaseous composition, gas flow rate and hard-bake conditions are examined in details in this study.",

author = "T. Ray and H. Zhu and Elango, {I. S.} and Deirdre Meldrum",

year = "2011",

month = apr,

day = "13",

doi = "10.1109/MEMSYS.2011.5734399",

language = "English (US)",

isbn = "9781424496327",

series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

pages = "213--216",

booktitle = "2011 IEEE 24th International Conference on Micro Electro Mechanical Systems, MEMS 2011",

note = "24th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2011 ; Conference date: 23-01-2011 Through 27-01-2011",

}

TY - GEN

T1 - Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica

AU - Ray, T.

AU - Zhu, H.

AU - Elango, I. S.

AU - Meldrum, Deirdre

PY - 2011/4/13

Y1 - 2011/4/13

N2 - In this paper we report our results from the process development and characterization of KMPR®1025 as a complimentary met al-oxide semiconductor (CMOS) process compatible masking layer for the deep reactive ion etching (RIE) of fused silica. The processing conditions and the etch resistivity of KMPR®1025 as a function of different parameters like pressure, gaseous composition, gas flow rate and hard-bake conditions are examined in details in this study.

AB - In this paper we report our results from the process development and characterization of KMPR®1025 as a complimentary met al-oxide semiconductor (CMOS) process compatible masking layer for the deep reactive ion etching (RIE) of fused silica. The processing conditions and the etch resistivity of KMPR®1025 as a function of different parameters like pressure, gaseous composition, gas flow rate and hard-bake conditions are examined in details in this study.

UR - http://www.scopus.com/inward/record.url?scp=79953788561&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953788561&partnerID=8YFLogxK

U2 - 10.1109/MEMSYS.2011.5734399

DO - 10.1109/MEMSYS.2011.5734399

M3 - Conference contribution

AN - SCOPUS:79953788561

SN - 9781424496327

T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

SP - 213

EP - 216

BT - 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems, MEMS 2011

T2 - 24th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2011

Y2 - 23 January 2011 through 27 January 2011

ER -

Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this