Characterization and reliability of SiC- and GaN-based power transistors for renewable energy applications

Keyphrases

• High Temperature 100%
• GaN-based 100%
• Power Transistors 100%
• Renewable Energy Consumption 100%
• Overcurrent 50%
• Vulnerability 25%
• Junction Temperature 25%
• Power Device 25%
• Overvoltage 25%
• Commercially Available 25%
• Sandia 25%
• Post-silicon 25%
• Si-based 25%
• On-state 25%
• Off-state 25%
• Room Temperature 25%
• Device-independent 25%
• Wide Band Gap Semiconductors 25%
• GaN-based Devices 25%
• Bias Conditions 25%
• Power Electronics Reliability 25%
• Current Collapse 25%
• GaN HEMT 25%
• Smart Grid Applications 25%
• Emerging Devices 25%
• Switching Devices 25%
• Renewable Microgrid 25%
• Reliability Program 25%
• Stress Bias 25%
• Operation Results 25%
• 4H-SiC MOSFET 25%

Engineering

• Energy Application 100%
• Renewable Energy 100%
• Power Electronics 50%
• Power Device 50%
• Junction Temperature 50%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Overvoltage 50%
• Room Temperature 50%
• Constant Time 50%
• Gate Bias 50%
• Wide Bandgap Semiconductor 50%
• State Operation 50%
• Smart Grid 50%

Material Science

• Silicon 100%
• Transistor 100%
• Power Device 100%
• Wide Bandgap Semiconductor 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Switch 100%